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RF
General-Purpose Broadband, 50 V
Wolfspeed's GaN HEMT devices are ideal for ultra-broadband amplifier applications and feature high breakdown voltage. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, unmatched discrete transistors from output powers 15 W to 350 W (CW) at 50 V and packaged 50-ohm MMIC amplifiers operating at 50 V suitable from DC–6 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.
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General-Purpose Broadband, 50 V
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General-Purpose Broadband, 50 V
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Yes | GaN on SiC | 0.5 GHz | 2.4 GHz | 5 W | 20 dB | 47% | 50 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 2.7 GHz | 5 W | 20 dB | 47% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 15 W | 21 dB | 32% | 50 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 18 dB | 33% | 50 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 30 W | 21 dB | 32% | 50 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | 2.5 GHz | 2.7 GHz | 30 W | 21 dB | 32% | 50 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 21 dB | 32% | 50 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 16 dB | 70% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 2.7 GHz | 30 W | 16 dB | 70% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 16 dB | 70% | 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 21 dB | 32% | 50 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 21 dB | 32% | 28 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | 2.5 GHz | 2.7 GHz | 30 W | 21 dB | 32% | 28 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 40 W | 65% | 50 V | Discrete Bare Die | Die | ||||||
Yes | GaN on SiC | 0.8 GHz | 2 GHz | 50 W | 16 dB | 53% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 4 GHz | 50 W | 16 dB | 53% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 4 GHz | 50 W | 16 dB | 53% | 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 2.7 GHz | 3.8 GHz | 60 W | 14.5 dB | 67% | 50 V | Packaged Discrete Transistor | Plastic | |||||
Yes | GaN on SiC | DC | 2.7 GHz | 60 W | 16.5 dB | 64% | 50 V | Packaged Discrete Transistor | Plastic | |||||
Yes | GaN on SiC | 0.8 GHz | 2.7 GHz | 60 W | 16.5 dB | 55% | 50 V | Evaluation Board | Plastic | |||||
Yes | GaN on SiC | 2.5 GHz | 2.7 GHz | 60 W | 16.5 dB | 64% | 50 V | Evaluation Board | Plastic | |||||
Yes | GaN on SiC | DC | 1 GHz | 60 W | 16.5 dB | 60% | Evaluation Board | Plastic | ||||||
Yes | GaN on SiC | DC | 6 GHz | 75 W | >7 dB | 65% | 50 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 0.5 GHz | 3 GHz | 80 W | 15 dB | 55% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 3 GHz | 80 W | 15 dB | 55% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 2.5 GHz | 100 W | 17.5 dB | 55% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 3 GHz | 100 W | 17.5 dB | 55% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 2.5 GHz | 100 W | 17.5 dB | 55% | 50 V | Evaluation Board | Pill | |||||
Yes | GaN on SiC | DC | 3 GHz | 100 W | 17.5 dB | 55% | 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 6 GHz | 170 W | 17 dB | 65% | 50 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 0.96 GHz | 1.25 GHz | 200 W | 24 dB | 70% | 28 V / 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 2 GHz | 200 W | 24 dB | 70% | 28 V / 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 2 GHz | 200 W | 24 dB | 70% | 28 V / 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 3 GHz | 250 W | 21 dB | 75% | 50 V | Packaged Discrete Transistor | Push-Pull | |||||
Yes | LDMOS | 0.47 GHz | 0.806 GHz | 250 W | 19 dB | 26% | 50 V | Packaged Discrete Transistor | Earless | |||||
Yes | LDMOS | 0.47 GHz | 0.806 GHz | 250 W | 19 dB | 26% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | 1.7 GHz | 1.9 GHz | 250 W | 21 dB | 75% | 50 V | Evaluation Board | Push-Pull | |||||
WST33H0NC New | Yes | GaN on SiC | 2.4 GHz | 2.5 GHz | 300 W | 17 dB | 75% | 50 V | Packaged Discrete Transistor | Push-Pull | ||||
Yes | GaN on SiC | DC | 4 GHz | 320 W | 19 dB | 65% | 50 V | Discrete Bare Die | Die | |||||
Yes | LDMOS | DC | 1.35 GHz | 350 W | 18 dB | 30% | 50 V | Packaged Discrete Transistor | Earless | |||||
Yes | LDMOS | DC | 1.35 GHz | 350 W | 18 dB | 30% | 50 V | Packaged Discrete Transistor | Bolt Down |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
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