Wolfspeed's GaN HEMT devices are ideal for ultra-broadband amplifier applications and feature high breakdown voltage. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, unmatched discrete transistors from output powers 15 W to 350 W (CW) at 50 V and packaged 50-ohm MMIC amplifiers operating at 50 V suitable from DC–6 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.
Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.