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General-Purpose Broadband, 50 V

Wolfspeed's GaN HEMT devices are ideal for ultra-broadband amplifier applications and feature high breakdown voltage. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, unmatched discrete transistors from output powers 15 W to 350 W (CW) at 50 V and packaged 50-ohm MMIC amplifiers operating at 50 V suitable from DC–6 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.
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General-Purpose Broadband, 50 V
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA0527005F-AMP1
Yes
GaN on SiC
0.5 GHz
2.7 GHz
5 W
20 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
0.5 GHz
2.4 GHz
5 W
20 dB
47%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
15 W
21 dB
32%
50 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
6 GHz
25 W
18 dB
33%
50 V
MMIC Bare Die
Die
Yes
GaN on SiC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
6 GHz
25 W
17 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
NA
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
NA
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
0.5 GHz
2.7 GHz
30 W
16 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
1.2 GHz
1.4 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
6 GHz
30 W
21 dB
32%
50 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
6 GHz
40 W
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
0.8 GHz
2 GHz
50 W
16 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
1 GHz
60 W
16.5 dB
NA
Evaluation Board
Plastic
Yes
GaN on SiC
2.5 GHz
2.7 GHz
60 W
16.5 dB
NA
50 V
Evaluation Board
Plastic
Yes
GaN on SiC
0.8 GHz
2.7 GHz
60 W
16.5 dB
NA
50 V
Evaluation Board
Plastic
Yes
GaN on SiC
2.7 GHz
3.8 GHz
60 W
14.5 dB
67%
50 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
DC
2.7 GHz
60 W
16.5 dB
64%
50 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
6 GHz
75 W
>7 dB
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
0.5 GHz
3 GHz
80 W
15 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
0.5 GHz
3 GHz
80 W
15 dB
55%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
3 GHz
100 W
17.5 dB
55%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
0.5 GHz
2.5 GHz
100 W
17.5 dB
NA
50 V
Evaluation Board
Pill
Yes
GaN on SiC
0.5 GHz
2.5 GHz
100 W
17.5 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
3 GHz
100 W
17.5 dB
55%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
6 GHz
170 W
17 dB
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
0.96 GHz
1.25 GHz
200 W
24 dB
NA
28 V / 50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
1.7 GHz
1.9 GHz
250 W
21 dB
NA
50 V
Evaluation Board
Push-Pull
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Earless
Yes
GaN on SiC
3 GHz
250 W
21 dB
75%
50 V
Packaged Discrete Transistor
Push-Pull
Yes
GaN on SiC
4 GHz
320 W
19 dB
65%
50 V
Discrete Bare Die
Die
Yes
LDMOS
1.35 GHz
350 W
18 dB
30%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
LDMOS
1.35 GHz
350 W
18 dB
30%
50 V
Packaged Discrete Transistor
Earless
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
Yes
GaN on SiC
0.5 GHz
2.7 GHz
5 W
20 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
0.5 GHz
2.4 GHz
5 W
20 dB
47%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
15 W
21 dB
32%
50 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
6 GHz
25 W
18 dB
33%
50 V
MMIC Bare Die
Die
Yes
GaN on SiC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
6 GHz
25 W
17 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
NA
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
NA
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
0.5 GHz
2.7 GHz
30 W
16 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
1.2 GHz
1.4 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
6 GHz
30 W
21 dB
32%
50 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
6 GHz
40 W
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
0.8 GHz
2 GHz
50 W
16 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
1 GHz
60 W
16.5 dB
NA
Evaluation Board
Plastic
Yes
GaN on SiC
2.5 GHz
2.7 GHz
60 W
16.5 dB
NA
50 V
Evaluation Board
Plastic
Yes
GaN on SiC
0.8 GHz
2.7 GHz
60 W
16.5 dB
NA
50 V
Evaluation Board
Plastic
Yes
GaN on SiC
2.7 GHz
3.8 GHz
60 W
14.5 dB
67%
50 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
DC
2.7 GHz
60 W
16.5 dB
64%
50 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
6 GHz
75 W
>7 dB
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
0.5 GHz
3 GHz
80 W
15 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
0.5 GHz
3 GHz
80 W
15 dB
55%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
3 GHz
100 W
17.5 dB
55%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
0.5 GHz
2.5 GHz
100 W
17.5 dB
NA
50 V
Evaluation Board
Pill
Yes
GaN on SiC
0.5 GHz
2.5 GHz
100 W
17.5 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
3 GHz
100 W
17.5 dB
55%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
6 GHz
170 W
17 dB
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
0.96 GHz
1.25 GHz
200 W
24 dB
NA
28 V / 50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
1.7 GHz
1.9 GHz
250 W
21 dB
NA
50 V
Evaluation Board
Push-Pull
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Earless
Yes
GaN on SiC
3 GHz
250 W
21 dB
75%
50 V
Packaged Discrete Transistor
Push-Pull
Yes
GaN on SiC
4 GHz
320 W
19 dB
65%
50 V
Discrete Bare Die
Die
Yes
LDMOS
1.35 GHz
350 W
18 dB
30%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
LDMOS
1.35 GHz
350 W
18 dB
30%
50 V
Packaged Discrete Transistor
Earless
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