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General-Purpose Broadband, 50 V

Wolfspeed's GaN HEMT devices are ideal for ultra-broadband amplifier applications and feature high breakdown voltage. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, unmatched discrete transistors from output powers 15 W to 350 W (CW) at 50 V and packaged 50-ohm MMIC amplifiers operating at 50 V suitable from DC–6 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.
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General-Purpose Broadband, 50 V

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Data Sheet
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Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA0527005F
Yes
GaN on SiC
0.5 GHz
2.4 GHz
5 W
20 dB
47%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
0.5 GHz
2.7 GHz
5 W
20 dB
47%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
15 W
21 dB
32%
50 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
18 dB
33%
50 V
MMIC Bare Die
Die
Yes
GaN on SiC
1.2 GHz
1.4 GHz
30 W
21 dB
32%
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
32%
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
6 GHz
30 W
21 dB
32%
50 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
0.5 GHz
2.7 GHz
30 W
16 dB
70%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
32%
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
32%
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
32%
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
6 GHz
40 W
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
0.8 GHz
2 GHz
50 W
16 dB
53%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
2.7 GHz
3.8 GHz
60 W
14.5 dB
67%
50 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
DC
2.7 GHz
60 W
16.5 dB
64%
50 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
0.8 GHz
2.7 GHz
60 W
16.5 dB
55%
50 V
Evaluation Board
Plastic
Yes
GaN on SiC
2.5 GHz
2.7 GHz
60 W
16.5 dB
64%
50 V
Evaluation Board
Plastic
Yes
GaN on SiC
DC
1 GHz
60 W
16.5 dB
60%
Evaluation Board
Plastic
Yes
GaN on SiC
DC
6 GHz
75 W
>7 dB
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
0.5 GHz
3 GHz
80 W
15 dB
55%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
0.5 GHz
3 GHz
80 W
15 dB
55%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
0.5 GHz
2.5 GHz
100 W
17.5 dB
55%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
3 GHz
100 W
17.5 dB
55%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
0.5 GHz
2.5 GHz
100 W
17.5 dB
55%
50 V
Evaluation Board
Pill
Yes
GaN on SiC
DC
3 GHz
100 W
17.5 dB
55%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
6 GHz
170 W
17 dB
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
0.96 GHz
1.25 GHz
200 W
24 dB
70%
28 V / 50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
3 GHz
250 W
21 dB
75%
50 V
Packaged Discrete Transistor
Push-Pull
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Earless
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
GaN on SiC
1.7 GHz
1.9 GHz
250 W
21 dB
75%
50 V
Evaluation Board
Push-Pull
Yes
GaN on SiC
DC
4 GHz
320 W
19 dB
65%
50 V
Discrete Bare Die
Die
Yes
LDMOS
DC
1.35 GHz
350 W
18 dB
30%
50 V
Packaged Discrete Transistor
Earless
Yes
LDMOS
DC
1.35 GHz
350 W
18 dB
30%
50 V
Packaged Discrete Transistor
Bolt Down
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