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CGHV27060

Wolfspeed CGHV27060MP GaN HEMT
60-W; DC to 2700-MHz; 50-V; GaN HEMT for LTE and Pulse-Radar Applications
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Wolfspeed’s CGHV27060MP is a 60-W gallium-nitride (GaN) high-electron-mobility transistor (HEMT) housed in a small; plastic SMT package 4.4-mm x 6.5-mm. The transistor is a broadband device with no internal input or output match; which allows for the agility to apply to a wide range of frequencies from UHF through 2.7 GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF; L-band or low S-band (<2.7 GHz). Additionally; the transistor is well suited for LTE micro-base-station amplifiers in the power class of 10 to 15-W average power in high-efficiency topologies such as Class A/B; F or Doherty amplifiers. The CGHV27060MP typical performance described in the data sheet is derived from a Class A/B reference design from 2.5 to 2.7 GHz.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV27060MP-AMP4
Yes
GaN on SiC
DC
1 GHz
60 W
16.5 dB
60%
Evaluation Board
Plastic
CGHV27060MP-AMP1
Yes
GaN on SiC
2.5 GHz
2.7 GHz
60 W
16.5 dB
64%
50 V
Evaluation Board
Plastic
CGHV27060MP-AMP3
Yes
GaN on SiC
0.8 GHz
2.7 GHz
60 W
16.5 dB
55%
50 V
Evaluation Board
Plastic
CGHV27060MP
Yes
GaN on SiC
DC
2.7 GHz
60 W
16.5 dB
64%
50 V
Packaged Discrete Transistor
Plastic
Features
  • From UHF thru 2.7GHz
  • 16.5 dB Gain at Pulsed PSAT
  • 70% Efficiency at Pulsed PSAT
  • 85 W at Pulsed PSAT
  • 18 dB Gain at Linear PAVE = 14 W
  • -35 dBc ACLR at Linear PAVE = 14 W
  • 33% Efficiency at Linear PAVE = 14 W
  • High Degree of DPD Correction Can be Applied
Applications
  • Pulsed applications at UHF; L Band; or low S Band. Also; Communication Amplifiers with 10 to 15 W avg power in high efficiency topologies such as Class A/B; F; or Doherty
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Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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