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CGHV35060MP

CGHV35060MP

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60-W; 2700 to 3800-MHz; 50-V; GaN HEMT for S-Band Radar and LTE Base Stations
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Wolfspeed’s CGHV35060MP is a 60-W input-matched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) optimized for S-band performance. The CGHV35060MP is suitable for typical bands of 2.7 to 3.1 GHz and 3.1 to 3.8 GHz while the input-matched transistor provides optimal gain; power and efficiency in a small 6.5-mm x 4.4-mm plastic surface-mount (SMT) package. The typical performance plots in the data sheet are derived with CGHV35060MP matched into a 3.1 to 3.8-GHz high-power amplifier.

Product SKU
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV35060MP
Yes
GaN on SiC
2.7 GHz
3.8 GHz
60 W
14.5 dB
67%
50 V
Packaged Discrete Transistor
Plastic
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV35060MP
Yes
GaN on SiC
2.7 GHz
3.8 GHz
60 W
14.5 dB
67%
50 V
Packaged Discrete Transistor
Plastic
Features
  • 75W Typical output power
  • 14.5 dB power gain
  • 67% Drain efficiency
  • Internally pre-matched on input; unmatched output
Applications
  • S-Band Amplifiers
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Document Type
Document Name
Version
Application Notes
Version: 1.0
Application Notes
Version: a
Application Notes
Version: 1.0
Data Sheets
Version: 2.2
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Product Ecology
CGHV27060MP – CGHV35060MP
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
Document Type
Document Name
Version
Application Notes
Version: 1.0
Application Notes
Version: a
Application Notes
Version: 1.0
Data Sheets
Version: 2.2
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Product Ecology
CGHV27060MP – CGHV35060MP
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
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