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CGHV35060MP

60-W; 2700 to 3800-MHz; 50-V; GaN HEMT for S-Band Radar and LTE Base Stations
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Wolfspeed’s CGHV35060MP is a 60-W input-matched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) optimized for S-band performance. The CGHV35060MP is suitable for typical bands of 2.7 to 3.1 GHz and 3.1 to 3.8 GHz while the input-matched transistor provides optimal gain; power and efficiency in a small 6.5-mm x 4.4-mm plastic surface-mount (SMT) package. The typical performance plots in the data sheet are derived with CGHV35060MP matched into a 3.1 to 3.8-GHz high-power amplifier.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
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Package Type
CGHV35060MP
Yes
GaN on SiC
2.7 GHz
3.8 GHz
60 W
14.5 dB
67%
50 V
Packaged Discrete Transistor
Plastic
Features
  • 75W Typical output power
  • 14.5 dB power gain
  • 67% Drain efficiency
  • Internally pre-matched on input; unmatched output
Applications
  • S-Band Amplifiers
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by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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