Contact
中文
Home
CGHV40180

CGHV40180

CGHV40180F+P GaN HEMT
180-W; DC - 2 GHz; GaN HEMT
Request Model Access

Wolfspeed’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input unmatched to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance.

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV40180P
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Pill
CGHV40180F
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Flange
CGHV40180F-AMP3
Yes
GaN on SiC
0.96 GHz
1.25 GHz
200 W
24 dB
NA
28 V / 50 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV40180P
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Pill
CGHV40180F
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Flange
CGHV40180F-AMP3
Yes
GaN on SiC
0.96 GHz
1.25 GHz
200 W
24 dB
NA
28 V / 50 V
Evaluation Board
Flange
Features
  • Input Unmatched
  • 180 W (CW) Minimum Pout
  • 250 W Typical Pout
  • 24 dB Typical Small Signal Gain
  • 28 V and 50 V Operation
Applications
  • Military Communications
  • Public Safety VHF-UHF applications
  • Radar
  • Medical
  • Broadband Amplifiers
Apply Filters
Document Type
Document Name
Version
Application Notes
Version: a
Application Notes
Version: a
Application Notes
Version: c
Application Notes
Version: a
Data Sheets
Version: 1.6
Data Sheets
Version: 1.3
S-parameters
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Product Ecology
CG2H40045F – CGHV40180F
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
Document Type
Document Name
Version
Application Notes
Version: a
Application Notes
Version: a
Application Notes
Version: c
Application Notes
Version: a
Data Sheets
Version: 1.6
Data Sheets
Version: 1.3
S-parameters
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Product Ecology
CG2H40045F – CGHV40180F
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
Need information?
Ready to buy?
Find a Distributor
Want to keep in touch?

Knowledge Center

View All
xband-hero-image
GaN on SiC

Integrated Expertise Delivers the Best GaN Solutions for X-Band PAs

Gallium nitride is the undisputed technology for achieving high-efficiency operation in high-frequency applications, such as those at X-band (8–12 GHz). But device selection for X-band applications doesn’t end with choosing the material technology, because turning the bulk material characteristics into high-performance GaN on SiC devices is quite another matter.
Continue Reading 
 Technical Articles
rf_virtual_tradeshow
Communication Infrastructure

Wolfspeed RF on the Web: A Virtual Trade Show Experience

We’ve missed seeing you at our industry trade shows this year. Check out our virtual booth to get an in-depth look at some of Wolfspeed’s most popular rf products
Continue Reading 
 Technical Articles
image_top-design-considerations-for-x-band-gan-power-amplifiers
GaN on SiC

Top Design Considerations for X-Band GaN Power Amplifiers

In this webinar, Dr. Robert Smith of PRFI Ltd. will discuss PA design considerations such as MMIC process selection, transistor sizing and biasing. He will also talk about the power combining of multiple transistors, matching considerations, and load-pull simulations.
Register Now 
 Webinars
Cree Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2021 Cree Wolfspeed