Features
- 18 dB Small Signal Gain
- 30 W Typical PSAT
- Operation up to 50 V
- High Breakdown Voltage
- High Temperature Operation
CMPA0060025
25-W; DC – 6.0-GHz; GaN MMIC Power Amplifier
Wolfspeed’s CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths to be achieved in a small-footprint.
Products
CMPA0060025
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CMPA0060025
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA0060025D | Yes | GaN on SiC | DC | 6 GHz | 25 W | 18 dB | 33% | 50 V | MMIC Bare Die | Die | ||||
CMPA0060025F | Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Packaged MMIC | Flange | ||||
CMPA0060025F-AMP | Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Evaluation Board | Flange | ||||
CMPA0060025F1-AMP | Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Evaluation Board | Flange | ||||
CMPA0060025F1 | Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Packaged MMIC | Flange |
Applications
- Ultra Broadband Amplifiers
- Test Instrumentation
- EMC Amplifier Drivers
Documents, Tools & Support
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Documents
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| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center
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