Features
- Up to 2.7 GHz Operation
- 8 W Typical Output Power
- 20 dB Small Signal Gain
- Application Circuit for 0.5 – 2.7 GHz
- 50% Efficiency
- 50 V Operation
CMPA0527005
5-W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers
CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 – 2.7 GHz. The transistor is available in a 6 leaded flange package.
Products
CMPA0527005
No filters selected, showing all 2 products
CMPA0527005
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA0527005F-AMP1 | Yes | GaN on SiC | 0.5 GHz | 2.7 GHz | 5 W | 20 dB | 47% | 50 V | Evaluation Board | Flange | ||||
CMPA0527005F | Yes | GaN on SiC | 0.5 GHz | 2.4 GHz | 5 W | 20 dB | 47% | 50 V | Packaged MMIC | Flange |
Applications
- Amplifier Predriver from 0.5 – 2.7 GHz
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Apply Filters
Document Type | Document Name |
|---|---|
| Design Files | |
| Design Files | |
| Application Notes | |
| Application Notes | |
| Application Notes | Operating at 50 V and 100 W
|
| Application Notes | |
| Data Sheets | |
| S-parameters | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
|
| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
|
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
|
| Product Catalog | |
| Sales Terms |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
SiC vs GaN vs Si: Find The Right Fit For Your Application
Explore Wolfspeed Silicon Carbide Power and GaN on Silicon Carbide RF solutions to enable your high performance systems.