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50V宽带应用场景

Wolfspeed GaN HEMT 器件非常适合超宽带放大器应用,并具有高击穿电压的特点。其高功率密度、低干扰和高截止频率 FT 的内在特性,使其支持瞬时带宽放大器的多倍频程。该系列产品包括出类拔萃的已封装分立式晶体管(工作电压 50 伏,输出功率 15 W 至 350 W [连续波CW])和 已封装50 欧姆 MMIC放大器(工作电压 50 伏,适合DC-6 GHz 应用)。该产品组合还包括分立式裸芯片和 MMIC 裸芯片,针对混合型放大器和多功能传输/接收模块而设计。

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频率(最小值)
频率(最大值)
峰值输出功率
增益
效率
工作电压
类型
封装类型
CMPA0527005F
Yes
GaN on SiC
0.5 GHz
2.4 GHz
5 W
20 dB
47%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
0.5 GHz
2.7 GHz
5 W
20 dB
47%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
15 W
21 dB
32%
50 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
18 dB
33%
50 V
MMIC Bare Die
Die
Yes
GaN on SiC
1.2 GHz
1.4 GHz
30 W
21 dB
32%
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
32%
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
6 GHz
30 W
21 dB
32%
50 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
0.5 GHz
2.7 GHz
30 W
16 dB
70%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
32%
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
32%
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
32%
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
6 GHz
40 W
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
0.8 GHz
2 GHz
50 W
16 dB
53%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
2.7 GHz
3.8 GHz
60 W
14.5 dB
67%
50 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
DC
2.7 GHz
60 W
16.5 dB
64%
50 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
0.8 GHz
2.7 GHz
60 W
16.5 dB
55%
50 V
Evaluation Board
Plastic
Yes
GaN on SiC
2.5 GHz
2.7 GHz
60 W
16.5 dB
64%
50 V
Evaluation Board
Plastic
Yes
GaN on SiC
DC
1 GHz
60 W
16.5 dB
60%
Evaluation Board
Plastic
Yes
GaN on SiC
DC
6 GHz
75 W
>7 dB
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
0.5 GHz
3 GHz
80 W
15 dB
55%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
0.5 GHz
3 GHz
80 W
15 dB
55%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
0.5 GHz
2.5 GHz
100 W
17.5 dB
55%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
3 GHz
100 W
17.5 dB
55%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
0.5 GHz
2.5 GHz
100 W
17.5 dB
55%
50 V
Evaluation Board
Pill
Yes
GaN on SiC
DC
3 GHz
100 W
17.5 dB
55%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
6 GHz
170 W
17 dB
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
0.96 GHz
1.25 GHz
200 W
24 dB
70%
28 V / 50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
3 GHz
250 W
21 dB
75%
50 V
Packaged Discrete Transistor
Push-Pull
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Earless
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
GaN on SiC
1.7 GHz
1.9 GHz
250 W
21 dB
75%
50 V
Evaluation Board
Push-Pull
Yes
GaN on SiC
DC
4 GHz
320 W
19 dB
65%
50 V
Discrete Bare Die
Die
Yes
LDMOS
DC
1.35 GHz
350 W
18 dB
30%
50 V
Packaged Discrete Transistor
Earless
Yes
LDMOS
DC
1.35 GHz
350 W
18 dB
30%
50 V
Packaged Discrete Transistor
Bolt Down
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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