50V宽带应用场景

50V宽带应用场景

Wolfspeed GaN HEMT 器件非常适合超宽带放大器应用，并具有高击穿电压的特点。其高功率密度、低干扰和高截止频率 FT 的内在特性，使其支持瞬时带宽放大器的多倍频程。该系列产品包括出类拔萃的已封装分立式晶体管（工作电压 50 伏，输出功率 15 W 至 350 W [连续波CW]）和已封装50 欧姆 MMIC放大器（工作电压 50 伏，适合DC-6 GHz 应用）。该产品组合还包括分立式裸芯片和 MMIC 裸芯片，针对混合型放大器和多功能传输/接收模块而设计。

SKU	新设计推荐？	技术	频率（最小值）	频率（最大值）	峰值输出功率	增益	效率	工作电压	类型	封装类型
CMPA0527005F	Yes	GaN on SiC	0.5 GHz	2.4 GHz	5 W	20 dB	47%	50 V	Packaged MMIC	Flange
CMPA0527005F-AMP1	Yes	GaN on SiC	0.5 GHz	2.7 GHz	5 W	20 dB	47%	50 V	Evaluation Board	Flange
CGHV27015S	Yes	GaN on SiC	DC	6 GHz	15 W	21 dB	32%	50 V	Packaged Discrete Transistor	Surface Mount
CMPA0060025F1-AMP	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Evaluation Board	Flange
CMPA0060025F1	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Packaged MMIC	Flange
CMPA0060025F-AMP	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Evaluation Board	Flange
CMPA0060025F	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Packaged MMIC	Flange
CMPA0060025D	Yes	GaN on SiC	DC	6 GHz	25 W	18 dB	33%	50 V	MMIC Bare Die	Die
CGHV27030S-AMP5	Yes	GaN on SiC	1.2 GHz	1.4 GHz	30 W	21 dB	32%	50 V	Evaluation Board	Surface Mount
CGHV27030S-AMP1	Yes	GaN on SiC	2.5 GHz	2.7 GHz	30 W	21 dB	32%	50 V	Evaluation Board	Surface Mount
CGHV27030S	Yes	GaN on SiC	DC	6 GHz	30 W	21 dB	32%	50 V	Packaged Discrete Transistor	Surface Mount
CGHV40030F	Yes	GaN on SiC	DC	6 GHz	30 W	16 dB	70%	50 V	Packaged Discrete Transistor	Flange
CGHV40030F-AMP2	Yes	GaN on SiC	0.5 GHz	2.7 GHz	30 W	16 dB	70%	50 V	Evaluation Board	Flange
CGHV40030P	Yes	GaN on SiC	DC	6 GHz	30 W	16 dB	70%	50 V	Packaged Discrete Transistor	Pill
CGHV27030S-AMP4	Yes	GaN on SiC	1.8 GHz	2.2 GHz	30 W	21 dB	32%	50 V	Evaluation Board	Surface Mount
CGHV27030S-AMP3	Yes	GaN on SiC	1.8 GHz	2.2 GHz	30 W	21 dB	32%	28 V	Evaluation Board	Surface Mount
CGHV27030S-AMP2	Yes	GaN on SiC	2.5 GHz	2.7 GHz	30 W	21 dB	32%	28 V	Evaluation Board	Surface Mount
CGHV60040D-GP4	Yes	GaN on SiC	DC	6 GHz	40 W		65%	50 V	Discrete Bare Die	Die
CGHV40050F-AMP	Yes	GaN on SiC	0.8 GHz	2 GHz	50 W	16 dB	53%	50 V	Evaluation Board	Flange
CGHV40050F	Yes	GaN on SiC	DC	4 GHz	50 W	16 dB	53%	50 V	Packaged Discrete Transistor	Flange
CGHV40050P	Yes	GaN on SiC	DC	4 GHz	50 W	16 dB	53%	50 V	Packaged Discrete Transistor	Pill
CGHV35060MP	Yes	GaN on SiC	2.7 GHz	3.8 GHz	60 W	14.5 dB	67%	50 V	Packaged Discrete Transistor	Plastic
CGHV27060MP	Yes	GaN on SiC	DC	2.7 GHz	60 W	16.5 dB	64%	50 V	Packaged Discrete Transistor	Plastic
CGHV27060MP-AMP3	Yes	GaN on SiC	0.8 GHz	2.7 GHz	60 W	16.5 dB	55%	50 V	Evaluation Board	Plastic
CGHV27060MP-AMP1	Yes	GaN on SiC	2.5 GHz	2.7 GHz	60 W	16.5 dB	64%	50 V	Evaluation Board	Plastic
CGHV27060MP-AMP4	Yes	GaN on SiC	DC	1 GHz	60 W	16.5 dB	60%		Evaluation Board	Plastic
CGHV60075D5-GP4	Yes	GaN on SiC	DC	6 GHz	75 W	>7 dB	65%	50 V	Discrete Bare Die	Die
CG2H30070F-AMP2	Yes	GaN on SiC	0.5 GHz	3 GHz	80 W	15 dB	55%	28 V	Evaluation Board	Flange
CG2H30070F	Yes	GaN on SiC	0.5 GHz	3 GHz	80 W	15 dB	55%	28 V	Packaged Discrete Transistor	Flange
CGHV40100F-AMP	Yes	GaN on SiC	0.5 GHz	2.5 GHz	100 W	17.5 dB	55%	50 V	Evaluation Board	Flange
CGHV40100F	Yes	GaN on SiC	DC	3 GHz	100 W	17.5 dB	55%	50 V	Packaged Discrete Transistor	Flange
CGHV40100P-AMP	Yes	GaN on SiC	0.5 GHz	2.5 GHz	100 W	17.5 dB	55%	50 V	Evaluation Board	Pill
CGHV40100P	Yes	GaN on SiC	DC	3 GHz	100 W	17.5 dB	55%	50 V	Packaged Discrete Transistor	Pill
CGHV60170D-GP4	Yes	GaN on SiC	DC	6 GHz	170 W	17 dB	65%	50 V	Discrete Bare Die	Die
CGHV40180F-AMP3	Yes	GaN on SiC	0.96 GHz	1.25 GHz	200 W	24 dB	70%	28 V / 50 V	Evaluation Board	Flange
CGHV40180F	Yes	GaN on SiC	DC	2 GHz	200 W	24 dB	70%	28 V / 50 V	Packaged Discrete Transistor	Flange
CGHV40180P	Yes	GaN on SiC	DC	2 GHz	200 W	24 dB	70%	28 V / 50 V	Packaged Discrete Transistor	Pill
CGHV40200PP	Yes	GaN on SiC	DC	3 GHz	250 W	21 dB	75%	50 V	Packaged Discrete Transistor	Push-Pull
PTVA042502FC-V1	Yes	LDMOS	0.47 GHz	0.806 GHz	250 W	19 dB	26%	50 V	Packaged Discrete Transistor	Earless
PTVA042502EC-V1	Yes	LDMOS	0.47 GHz	0.806 GHz	250 W	19 dB	26%	50 V	Packaged Discrete Transistor	Bolt Down
CGHV40200PP-AMP1	Yes	GaN on SiC	1.7 GHz	1.9 GHz	250 W	21 dB	75%	50 V	Evaluation Board	Push-Pull
CGHV40320D-GP4	Yes	GaN on SiC	DC	4 GHz	320 W	19 dB	65%	50 V	Discrete Bare Die	Die
PTVA043502FC-V1	Yes	LDMOS	DC	1.35 GHz	350 W	18 dB	30%	50 V	Packaged Discrete Transistor	Earless
PTVA043502EC-V1	Yes	LDMOS	DC	1.35 GHz	350 W	18 dB	30%	50 V	Packaged Discrete Transistor	Bolt Down

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.

Technical Articles

Communications Infrastructure

Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.

Technical Articles

Power

MOSFETs

Wolfspeed C3M™ 650 V MOSFETs Push Silicon Carbide Advantages in Power Applications

Wolfspeed’s cutting edge Silicon Carbide 650 V MOSFET family opens up new performance levels in a wide range of applications for your power designs.

Infographic

Knowledge Center

Thermal Considerations for High-Power GaN RF Amplifiers

Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed C3M™ 650 V MOSFETs Push Silicon Carbide Advantages in Power Applications