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50V宽带应用场景

Wolfspeed GaN HEMT 器件非常适合超宽带放大器应用,并具有高击穿电压的特点。其高功率密度、低干扰和高截止频率 FT 的内在特性,使其支持瞬时带宽放大器的多倍频程。该系列产品包括出类拔萃的已封装分立式晶体管(工作电压 50 伏,输出功率 15 W 至 350 W [连续波CW])和 已封装50 欧姆 MMIC放大器(工作电压 50 伏,适合DC-6 GHz 应用)。该产品组合还包括分立式裸芯片和 MMIC 裸芯片,针对混合型放大器和多功能传输/接收模块而设计。

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General Purpose Broadband, 50 V | 50V宽带应用场景
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频率(最小值)
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峰值输出功率
增益
效率
工作电压
类型
封装类型
CMPA0527005F
Yes
GaN on SiC
0.5 GHz
2.4 GHz
5 W
20 dB
47%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
0.5 GHz
2.7 GHz
5 W
20 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
15 W
21 dB
32%
50 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
18 dB
33%
50 V
MMIC Bare Die
Die
Yes
GaN on SiC
1.2 GHz
1.4 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
6 GHz
30 W
21 dB
32%
50 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
0.5 GHz
2.7 GHz
30 W
16 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
NA
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
NA
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
6 GHz
40 W
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
0.8 GHz
2 GHz
50 W
16 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
2.7 GHz
3.8 GHz
60 W
14.5 dB
67%
50 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
DC
2.7 GHz
60 W
16.5 dB
64%
50 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
0.8 GHz
2.7 GHz
60 W
16.5 dB
NA
50 V
Evaluation Board
Plastic
Yes
GaN on SiC
2.5 GHz
2.7 GHz
60 W
16.5 dB
NA
50 V
Evaluation Board
Plastic
Yes
GaN on SiC
DC
1 GHz
60 W
16.5 dB
NA
Evaluation Board
Plastic
Yes
GaN on SiC
DC
6 GHz
75 W
>7 dB
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
0.5 GHz
3 GHz
80 W
15 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
0.5 GHz
3 GHz
80 W
15 dB
55%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
0.5 GHz
2.5 GHz
100 W
17.5 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
3 GHz
100 W
17.5 dB
55%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
0.5 GHz
2.5 GHz
100 W
17.5 dB
NA
50 V
Evaluation Board
Pill
Yes
GaN on SiC
DC
3 GHz
100 W
17.5 dB
55%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
6 GHz
170 W
17 dB
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
0.96 GHz
1.25 GHz
200 W
24 dB
NA
28 V / 50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
3 GHz
250 W
21 dB
75%
50 V
Packaged Discrete Transistor
Push-Pull
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Earless
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
GaN on SiC
1.7 GHz
1.9 GHz
250 W
21 dB
NA
50 V
Evaluation Board
Push-Pull
Yes
GaN on SiC
DC
4 GHz
320 W
19 dB
65%
50 V
Discrete Bare Die
Die
Yes
LDMOS
DC
1.35 GHz
350 W
18 dB
30%
50 V
Packaged Discrete Transistor
Earless
Yes
LDMOS
DC
1.35 GHz
350 W
18 dB
30%
50 V
Packaged Discrete Transistor
Bolt Down
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