Contact
中文
Home
PTVA04250

PTVA04250

h-37248-4_1_4_2
High Power RF LDMOS FETs 250 W; 50 V; 470 – 806 MHz

The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Wolfspeed’s advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA042502EC-V1
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Bolt Down
PTVA042502FC-V1
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Earless
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA042502EC-V1
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Bolt Down
PTVA042502FC-V1
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Earless
Features
  • Input matched
  • Integrated ESD protection
  • Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • RoHS compliant
  • Capable of withstanding a 10:1 VSWR at 55W average power under DVB-T signal condition
Applications
  • Power Amplifiers in the 470 – 806 MHz frequency band
Apply Filters
Document Type
Document Name
Version
Data Sheets
Version: 4
Product Catalog
Version: 1.0
Sales Terms
Version: M
Document Type
Document Name
Version
Data Sheets
Version: 4
Product Catalog
Version: 1.0
Sales Terms
Version: M
Need information?
Ready to buy?
Find a Distributor
Want to keep in touch?

Knowledge Center

View All
xband-hero-image
GaN on SiC

Integrated Expertise Delivers the Best GaN Solutions for X-Band PAs

Gallium nitride is the undisputed technology for achieving high-efficiency operation in high-frequency applications, such as those at X-band (8–12 GHz). But device selection for X-band applications doesn’t end with choosing the material technology, because turning the bulk material characteristics into high-performance GaN on SiC devices is quite another matter.
Continue Reading 
 Technical Articles
rf_virtual_tradeshow
Communication Infrastructure

Wolfspeed RF on the Web: A Virtual Trade Show Experience

We’ve missed seeing you at our industry trade shows this year. Check out our virtual booth to get an in-depth look at some of Wolfspeed’s most popular rf products
Continue Reading 
 Technical Articles
image_top-design-considerations-for-x-band-gan-power-amplifiers
GaN on SiC

Top Design Considerations for X-Band GaN Power Amplifiers

In this webinar, Dr. Robert Smith of PRFI Ltd. will discuss PA design considerations such as MMIC process selection, transistor sizing and biasing. He will also talk about the power combining of multiple transistors, matching considerations, and load-pull simulations.
Register Now 
 Webinars
Cree Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2021 Cree Wolfspeed