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PTVA04250

PTVA04250

High Power RF LDMOS FETs 250 W; 50 V; 470 – 806 MHz

The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Wolfspeed’s advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA042502EC-V1
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Bolt Down
PTVA042502FC-V1
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Earless
Features
  • Input matched
  • Integrated ESD protection
  • Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • RoHS compliant
  • Capable of withstanding a 10:1 VSWR at 55W average power under DVB-T signal condition
Applications
  • Power Amplifiers in the 470 – 806 MHz frequency band
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RF
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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