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RF
Ku-Band
Wolfspeed’s GaN-on-SiC solutions are well suited for linear, pulsed and CW Ku-Band applications. With a variety of power levels, high gain/stage and high power-added efficiency (PAE), Wolfspeed’s solutions support continuous improvements in SWAP-C benchmarks. Thereby driving the next generation of marine, ground, airborne and space platforms. Such platforms include satellite communications, radar solutions such as fire-control and drone tracking, broadband electronics warfare, and instrumentation amplifiers; as well as other defense and commercial based systems.
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Ku-Band
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Ku-Band
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Yes | GaN on SiC | 12.7 GHz | 18 GHz | 1 W | 23 dB | 30% | 28 V | Packaged MMIC | Surface Mount | |||||
CMPA1D1J001S New | Yes | GaN on SiC | 12.7 GHz | 18 GHz | 1 W | 23 dB | 30% | 28 V | Packaged MMIC | Surface Mount | ||||
Yes | GaN on SiC | 6 GHz | 18 GHz | 25 W | 20 dB | 20% | 22 V | Packaged MMIC | Flange | |||||
CMPA601J025F New | Yes | GaN on SiC | 6 GHz | 18 GHz | 25 W | 20 dB | 20% | 22 V | Packaged MMIC | Flange | ||||
Yes | GaN on SiC | 6 GHz | 12 GHz | 25 W | 33 dB | 32% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 6 GHz | 12 GHz | 25 W | 33 dB | 32% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 6 GHz | 18 GHz | 25 W | 30 dB | 27% | 22 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 6 GHz | 12 GHz | 25 W | 32 dB | 32% | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 13.5 GHz | 14.5 GHz | 25 W | 26 dB | 16% | 40 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 13.5 GHz | 14.5 GHz | 25 W | 26 dB | 16% | 40 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 13.75 GHz | 14.5 GHz | 30 W | 26 dB | 25% | 40 V | MMIC Bare Die | Die | |||||
CMPA1E1F060F New | Yes | GaN on SiC | 13.4 GHz | 15.5 GHz | 60 W | 26 dB | 28 V | Packaged MMIC | Flange | |||||
CMPA1F1H060F New | Yes | GaN on SiC | 15.4 GHz | 17.7 GHz | 60 W | 25 dB | 28 V | Packaged MMIC | Flange | |||||
CMPA1E1F060D New | Yes | GaN on SiC | 13.75 GHz | 15.5 GHz | 60 W | 26 dB | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 12.7 GHz | 13.25 GHz | 65 W | 26 dB | 30% | 40 V | MMIC Bare Die | Die | |||||
CMPA1F1H060S New | Yes | GaN on SiC | 15.4 GHz | 17.7 GHz | 80 W | 25 dB | 28 V | Packaged MMIC | Plastic | |||||
CMPA1F1H060D New | Yes | GaN on SiC | 15.4 GHz | 17.7 GHz | 80 W | 26 dB | 28 V | MMIC Bare Die | Die | |||||
No | GaN on SiC | 12.75 GHz | 13.25 GHz | 90 W | 25 dB | 30% | 40 V | Packaged MMIC | Flange |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
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Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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