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CMPA1D1J001

Wolfspeed CMPA1D1J001S surface mount package
12.7 - 18 GHz, 1W GaN MMIC HPA

Wolfspeed’s CMPA1D1J001S is a 1W package MMIC HPA utilizing Wolfspeed’s high performance, 0.15um GaN on SiC production process. The CMPA1D1J001S operates from 12.7-18 GHz and supports both radar and communication applications within both military and commercial markets. The CMPA1D1J001S achieves 1 W of saturated output power with 23 dB of large signal gain and typically 30% power-added efficiency under CW operation.

Packaged in a 4×3 mm plastic overmold QFN, the CMPA1D1J001S provides superior broadband performance and environmental robustness in a small form factor allowing customers to improve SWaP-C benchmarks in their next-generation systems.

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CMPA1D1J001

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CMPA1D1J001

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA1D1J001S
New
Yes
GaN on SiC
12.7 GHz
18 GHz
1 W
23 dB
30%
28 V
Packaged MMIC
Surface Mount
CMPA1D1J001S-AMP1
New
Yes
GaN on SiC
12.7 GHz
18 GHz
1 W
23 dB
30%
28 V
Packaged MMIC
Surface Mount
Features
  • Psat: 1 W
  • PAE: 30 %
  • LSG: 23 dB
  • S21: 27 dB
  • S11: -10 dB
  • S22: -8 dB
  • CW operation
  • Small 4 x 3 mm footprint
Applications
  • Aerospace
  • Radar
  • General Purpose Broadband – 28V
  • Satellite Communications

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Documents

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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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