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CMPA1D1J001

Wolfspeed CMPA1D1J001S surface mount package
12.7 - 18 GHz, 1W GaN MMIC HPA
Wolfspeed’s CMPA1D1J001S is a 1W package MMIC HPA utilizing Wolfspeed’s high performance, 0.15um GaN on SiC production process. The CMPA1D1J001S operates from 12.7-18 GHz and supports both radar and communication applications within both military and commercial markets. The CMPA1D1J001S achieves 1 W of saturated output power with 23 dB of large signal gain and typically 30% power-added efficiency under CW operation. Packaged in a 4x3 mm plastic overmold QFN, the CMPA1D1J001S provides superior broadband performance and environmental robustness in a small form factor allowing customers to improve SWaP-C benchmarks in their next-generation systems.

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CMPA1D1J001

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CMPA1D1J001

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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA1D1J001S
New
Yes
GaN on SiC
12.7 GHz
18 GHz
1 W
23 dB
30%
28 V
Packaged MMIC
Surface Mount
CMPA1D1J001S-AMP1
New
Yes
GaN on SiC
12.7 GHz
18 GHz
1 W
23 dB
30%
28 V
Packaged MMIC
Surface Mount
Features
  • Psat: 1 W
  • PAE: 30 %
  • LSG: 23 dB
  • S21: 27 dB
  • S11: -10 dB
  • S22: -8 dB
  • CW operation
  • Small 4 x 3 mm footprint
Applications
  • Aerospace
  • Radar
  • General Purpose Broadband – 28V
  • Satellite Communications

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Design Files
Data Sheets
S-parameters
S-parameters
S-parameters
S-parameters
S-parameters
S-parameters
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Knowledge Center

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

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Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading  Technical Articles

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