RF
L-Band
Wolfspeed’s GaN on SiC solutions are well suited for pulsed and CW L-band applications. With a variety of power levels, high gain/stage and high power-added efficiency, Wolfspeed’s solutions support continuous improvements in SWAP-C benchmarks. Thereby driving the next generation of radar and avionics systems.
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Products
L-Band
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L-Band
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Yes | GaN on SiC | DC | 6 GHz | 2 W | 18 dB | 25% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 18 dB | 25% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 23% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 23% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 30% | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 0.5 GHz | 2.4 GHz | 5 W | 20 dB | 47% | 50 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 2.7 GHz | 5 W | 20 dB | 47% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 15 GHz | 6 W | >7 dB | 52% | 40 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 6 W | >11 dB | 65% | 28 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 6 W | >11 dB | 65% | 28 V | Packaged Discrete Transistor | Plastic | |||||
Yes | GaN on SiC | DC | 6 GHz | 6 W | >11 dB | 65% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 18 GHz | 6 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 8 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 3.5 GHz | 3.9 GHz | 10 W | >16 dB | 65% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 10 W | >16 dB | 65% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 10 W | >14 dB | 65% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 10 W | >16 dB | 65% | 28 V | Packaged Discrete Transistor | Pill | |||||
No | GaN on SiC | DC | 6 GHz | 10 W | >14 dB | 65% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | LDMOS | 0.39 GHz | 0.45 GHz | 12 W | 25 dB | 69% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | DC | 6 GHz | 15 W | 21 dB | 32% | 50 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 15 W | 14.5 dB | 28% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 8 GHz | 15 W | >12 dB | 70% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 6 GHz | 15 W | 14.5 dB | 28% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 15 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 15 GHz | 25 W | 11 dB | 51% | 40 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | 3.4 GHz | 3.8 GHz | 25 W | >15 dB | 62% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | >15 dB | 62% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | >15 dB | 64% | 28 V | Packaged Discrete Transistor | Pill | |||||
No | GaN on SiC | DC | 6 GHz | 25 W | >13 dB | 62% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 18 GHz | 25 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 18 dB | 33% | 50 V | MMIC Bare Die | Die | |||||
Yes | LDMOS | 0.5 GHz | 1.4 GHz | 25 W | 19 dB | 64% | 48 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | LDMOS | 0.5 GHz | 1.4 GHz | 25 W | 18 dB | 54% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 30 W | 21 dB | 32% | 50 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 21 dB | 32% | 50 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 16 dB | 70% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 18 dB | 33% | 28 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 18 dB | 33% | 28 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 10 dB | 25% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 0.5 GHz | 2.7 GHz | 30 W | 16 dB | 70% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 16 dB | 70% | 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 15 dB | 28% | 28 V | Evaluation Board | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 30 W | 15 dB | 28% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 21 dB | 32% | 50 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 21 dB | 32% | 28 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 8 GHz | 30 W | 16.5 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 10 dB | 25% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 30 W | 15 dB | 28% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 30 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 35 W | 14 dB | 64% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 35 W | 14 dB | 64% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 35 W | >13 dB | 60% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 35 W | 14 dB | 64% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 6 GHz | 40 W | 65% | 50 V | Discrete Bare Die | Die | ||||||
Yes | GaN on SiC | DC | 4 GHz | 45 W | >14 dB | 55% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 4 GHz | 45 W | >12 dB | 55% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 4 GHz | 45 W | >14 dB | 55% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 8 GHz | 45 W | 15 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 4 GHz | 45 W | >12 dB | 55% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 0.8 GHz | 2 GHz | 50 W | 16 dB | 53% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 4 GHz | 50 W | 16 dB | 53% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 4 GHz | 50 W | 16 dB | 53% | 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | LDMOS | 1.2 GHz | 1.4 GHz | 50 W | 17 dB | 50% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | DC | 2.7 GHz | 60 W | 16.5 dB | 64% | 50 V | Packaged Discrete Transistor | Plastic | |||||
Yes | GaN on SiC | DC | 8 GHz | 60 W | >12 dB | 70% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 4 GHz | 60 W | 14 dB | 27% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 60 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 18 GHz | 70 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 75 W | >7 dB | 65% | 50 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 0.5 GHz | 3 GHz | 80 W | 15 dB | 55% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 3 GHz | 80 W | 15 dB | 55% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 2.5 GHz | 90 W | >14 dB | 55% | 28 V | Evaluation Board | Push-Pull | |||||
Yes | GaN on SiC | DC | 4 GHz | 90 W | >14 dB | 55% | 28 V | Packaged Discrete Transistor | Push-Pull | |||||
Yes | GaN on SiC | 0.5 GHz | 2.5 GHz | 100 W | 17.5 dB | 55% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 3 GHz | 100 W | 17.5 dB | 55% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 2.5 GHz | 100 W | 17.5 dB | 55% | 50 V | Evaluation Board | Pill | |||||
Yes | GaN on SiC | DC | 3 GHz | 100 W | 17.5 dB | 55% | 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 8 GHz | 120 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 6 GHz | 120 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 3 GHz | 120 W | >15 dB | 70% | 28 V | Evaluation Board | Flange | |||||
No | GaN on SiC | 1.2 GHz | 1.4 GHz | 120 W | >15 dB | 70% | 28 V | Evaluation Board | Flange | |||||
Discontinued | GaN on SiC | 1.8 GHz | 2.1 GHz | 120 W | 15 dB | 35% | 28 V | Evaluation Board | Flange | |||||
Discontinued | GaN on SiC | 1.8 GHz | 2.3 GHz | 120 W | 15 dB | 35% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 2.5 GHz | 120 W | 21 dB | 35% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 3 GHz | 120 W | >15 dB | 70% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 6 GHz | 170 W | 17 dB | 65% | 50 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 1.1 GHz | 1.3 GHz | 180 W | >15 dB | 70% | 28 V | Evaluation Board | Push-Pull | |||||
Yes | GaN on SiC | DC | 3 GHz | 180 W | >15 dB | 70% | 28 V | Packaged Discrete Transistor | Push-Pull | |||||
Yes | GaN on SiC | 0.96 GHz | 1.25 GHz | 200 W | 24 dB | 70% | 28 V / 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 2 GHz | 200 W | 24 dB | 70% | 28 V / 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 2 GHz | 200 W | 24 dB | 70% | 28 V / 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | LDMOS | 0.96 GHz | 1.6 GHz | 200 W | 18.5 dB | 60% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | 1.8 GHz | 2.1 GHz | 240 W | 15 dB | 33% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 1.8 GHz | 2.3 GHz | 240 W | 15 dB | 33% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 50 V | Packaged Discrete Transistor | Pill | |||||