RF
L-Band
Wolfspeed’s GaN on SiC solutions are well suited for pulsed and CW L-band applications. With a variety of power levels, high gain/stage and high power-added efficiency, Wolfspeed’s solutions support continuous improvements in SWAP-C benchmarks. Thereby driving the next generation of radar and avionics systems.
Products
L-Band
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L-Band
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Yes | GaN on SiC | DC | 6 GHz | 2 W | 18 dB | 25% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 18 dB | 25% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 23% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 23% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 30% | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 0.5 GHz | 2.4 GHz | 5 W | 20 dB | 47% | 50 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 2.7 GHz | 5 W | 20 dB | 47% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 15 GHz | 6 W | >7 dB | 52% | 40 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 6 W | >11 dB | 65% | 28 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 6 W | >11 dB | 65% | 28 V | Packaged Discrete Transistor | Plastic | |||||
Yes | GaN on SiC | DC | 6 GHz | 6 W | >11 dB | 65% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 18 GHz | 6 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 8 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 3.5 GHz | 3.9 GHz | 10 W | >16 dB | 65% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 10 W | >16 dB | 65% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 10 W | >14 dB | 65% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 10 W | >16 dB | 65% | 28 V | Packaged Discrete Transistor | Pill | |||||
No | GaN on SiC | DC | 6 GHz | 10 W | >14 dB | 65% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | LDMOS | 0.39 GHz | 0.45 GHz | 12 W | 25 dB | 69% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | DC | 6 GHz | 15 W | 21 dB | 32% | 50 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 15 W | 14.5 dB | 28% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 8 GHz | 15 W | >12 dB | 70% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 6 GHz | 15 W | 14.5 dB | 28% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 15 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 15 GHz | 25 W | 11 dB | 51% | 40 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | 3.4 GHz | 3.8 GHz | 25 W | >15 dB | 62% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | >15 dB | 62% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | >15 dB | 64% | 28 V | Packaged Discrete Transistor | Pill | |||||
No | GaN on SiC | DC | 6 GHz | 25 W | >13 dB | 62% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 18 GHz | 25 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | 18 dB | 33% | 50 V | MMIC Bare Die | Die | |||||
Yes | LDMOS | 0.5 GHz | 1.4 GHz | 25 W | 19 dB | 64% | 48 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | LDMOS | 0.5 GHz | 1.4 GHz | 25 W | 18 dB | 54% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 30 W | 21 dB | 32% | 50 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 21 dB | 32% | 50 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 16 dB | 70% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 18 dB | 33% | 28 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 18 dB | 33% | 28 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 10 dB | 25% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 0.5 GHz | 2.7 GHz | 30 W | 16 dB | 70% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 16 dB | 70% | 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 15 dB | 28% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 15 dB | 28% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 21 dB | 32% | 50 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 21 dB | 32% | 28 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 8 GHz | 30 W | 16.5 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 10 dB | 25% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 30 W | 15 dB | 28% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 30 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 35 W | 14 dB | 64% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 35 W | 14 dB | 64% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 35 W | >13 dB | 60% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 35 W | 14 dB | 64% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 6 GHz | 40 W | 65% | 50 V | Discrete Bare Die | Die | ||||||
Yes | GaN on SiC | DC | 4 GHz | 45 W | >14 dB | 55% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 4 GHz | 45 W | >12 dB | 55% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 4 GHz | 45 W | >14 dB | 55% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 8 GHz | 45 W | 15 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 4 GHz | 45 W | >12 dB | 55% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 0.8 GHz | 2 GHz | 50 W | 16 dB | 53% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 4 GHz | 50 W | 16 dB | 53% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 4 GHz | 50 W | 16 dB | 53% | 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | LDMOS | 1.2 GHz | 1.4 GHz | 50 W | 17 dB | 50% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | DC | 2.7 GHz | 60 W | 16.5 dB | 64% | 50 V | Packaged Discrete Transistor | Plastic | |||||
Yes | GaN on SiC | DC | 8 GHz | 60 W | >12 dB | 70% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 4 GHz | 60 W | 14 dB | 27% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 60 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 18 GHz | 70 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 75 W | >7 dB | 65% | 50 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 0.5 GHz | 3 GHz | 80 W | 15 dB | 55% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 3 GHz | 80 W | 15 dB | 55% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 2.5 GHz | 90 W | >14 dB | 55% | 28 V | Evaluation Board | Push-Pull | |||||
Yes | GaN on SiC | DC | 4 GHz | 90 W | >14 dB | 55% | 28 V | Packaged Discrete Transistor | Push-Pull | |||||
Yes | GaN on SiC | 0.5 GHz | 2.5 GHz | 100 W | 17.5 dB | 55% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 3 GHz | 100 W | 17.5 dB | 55% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 2.5 GHz | 100 W | 17.5 dB | 55% | 50 V | Evaluation Board | Pill | |||||
Yes | GaN on SiC | DC | 3 GHz | 100 W | 17.5 dB | 55% | 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 8 GHz | 120 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 6 GHz | 120 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 3 GHz | 120 W | >15 dB | 70% | 28 V | Evaluation Board | Flange | |||||
No | GaN on SiC | 1.2 GHz | 1.4 GHz | 120 W | >15 dB | 70% | 28 V | Evaluation Board | Flange | |||||
Discontinued | GaN on SiC | 1.8 GHz | 2.1 GHz | 120 W | 15 dB | 35% | 28 V | Evaluation Board | Flange | |||||
Discontinued | GaN on SiC | 1.8 GHz | 2.3 GHz | 120 W | 15 dB | 35% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 2.5 GHz | 120 W | 21 dB | 35% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 3 GHz | 120 W | >15 dB | 70% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 6 GHz | 170 W | 17 dB | 65% | 50 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 1.1 GHz | 1.3 GHz | 180 W | >15 dB | 70% | 28 V | Evaluation Board | Push-Pull | |||||
Yes | GaN on SiC | DC | 3 GHz | 180 W | >15 dB | 70% | 28 V | Packaged Discrete Transistor | Push-Pull | |||||
Yes | GaN on SiC | 0.96 GHz | 1.25 GHz | 200 W | 24 dB | 70% | 28 V / 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 2 GHz | 200 W | 24 dB | 70% | 28 V / 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 2 GHz | 200 W | 24 dB | 70% | 28 V / 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | LDMOS | 0.96 GHz | 1.6 GHz | 200 W | 18.5 dB | 60% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | 1.8 GHz | 2.1 GHz | 240 W | 15 dB | 33% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 1.8 GHz | 2.3 GHz | 240 W | 15 dB | 33% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 3 GHz | 250 W | 21 dB | 75% | 50 V | Packaged Discrete Transistor | Push-Pull | |||||
Yes | LDMOS | 0.47 GHz | 0.806 GHz | 250 W | 19 dB | 26% | 50 V | Packaged Discrete Transistor | Earless | |||||
Yes | LDMOS | 0.47 GHz | 0.806 GHz | 250 W | 19 dB | 26% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | 1.7 GHz | 1.9 GHz | 250 W | 21 dB | 75% | 50 V | Evaluation Board | Push-Pull | |||||
Yes | GaN on SiC | DC | 4 GHz | 320 W | 19 dB | 65% | 50 V | Discrete Bare Die | Die | |||||
Yes | LDMOS | 1.2 GHz | 1.4 GHz | 350 W | 17 dB | 55% | 50 V | Packaged Discrete Transistor | Earless | |||||
Yes | LDMOS | 1.2 GHz | 1.4 GHz | 350 W | 17 dB | 55% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
No | GaN on SiC | 1.2 GHz | 1.4 GHz | 350 W | 18 dB | 71% | 50 V | Packaged Discrete Transistor | Earless | |||||
Yes | LDMOS | DC | 1.35 GHz | 350 W | 18 dB | 30% | 50 V | Packaged Discrete Transistor | Earless | |||||
Yes | LDMOS | DC | 1.35 GHz | 350 W | 18 dB | 30% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
No | GaN on SiC | 0.96 GHz | 1.215 GHz | 400 W | 19 dB | 70% | 50 V | Packaged Discrete Transistor | Earless | |||||
Yes | LDMOS | 0.96 GHz | 1.215 GHz | 450 W | 17.5 dB | 58% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | LDMOS | 0.39 GHz | 0.45 GHz | 450 W | 18 dB | 64% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 500 W | 16 dB | 68% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 500 W | 16 dB | 68% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 500 W | 16 dB | 68% | 50 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 600 W | 20 dB | 63% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 600 W | 20 dB | 63% | 50 V | Packaged Discrete Transistor | Earless | |||||
Yes | GaN on SiC | 0.96 GHz | 1.215 GHz | 700 W | 20 dB | 70% | 50 V | Packaged Discrete Transistor | Earless | |||||
Yes | GaN on SiC | 0.96 GHz | 1.215 GHz | 700 W | 20 dB | 70% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | LDMOS | 1.2 GHz | 1.4 GHz | 700 W | 16 dB | 56% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | 0.96 GHz | 1.215 GHz | 700 W | 20 dB | 70% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | LDMOS | 0.47 GHz | 0.806 GHz | 700 W | 17.5 dB | 29% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
CGHV14800F1 New | Yes | GaN on SiC | 0.9 GHz | 1.4 GHz | 800 W | 15 dB | 65% | 50 V | Packaged Discrete Transistor | Flange | ||||
Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 800 W | 16 dB | 65% | 50 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 800 W | 16 dB | 65% | 50 V | Packaged Discrete Transistor | Flange | |||||
Yes | LDMOS | 1.03 GHz | 1.09 GHz | 900 W | 18 dB | 65% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | 0.96 GHz | 1.4 GHz | 1400 W | 17 dB | 68% | 50 V | Packaged Discrete Transistor | Bolt Down | |||||
Yes | GaN on SiC | 0.96 GHz | 1.4 GHz | 1400 W | 17 dB | 68% | 50 V | Packaged Discrete Transistor | Bolt Down |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.