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CG2H40035

Wolfspeed RF CG2H40035 flange and pill
35-W RF Power GaN HEMT
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Wolfspeed’s CG2H40035 is an unmatched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits. The transistor is available in both a screw-down; flange package and solder-down; pill packages.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CG2H40035F-AMP1
Yes
GaN on SiC
0.5 GHz
3 GHz
35 W
14 dB
50%
28 V
Evaluation Board
Flange
CG2H40035P
Yes
GaN on SiC
DC
6 GHz
35 W
14 dB
64%
28 V
Packaged Discrete Transistor
Pill
CG2H40035F-AMP
Yes
GaN on SiC
DC
6 GHz
35 W
14 dB
64%
28 V
Evaluation Board
Flange
CG2H40035F
Yes
GaN on SiC
DC
6 GHz
35 W
14 dB
64%
28 V
Packaged Discrete Transistor
Flange
Features
  • Up to 6 GHz Operation
  • 40 W typical PSAT
  • 64% Efficiency at PSAT
  • 14 dB Small Signal Gain at 3.5 GHz
  • 28 V Operation
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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