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CG2H80015D

Wolfspeed RF CG2H80015D die
Warning:

Cancer & Reproductive Harm – www.p65warnings.ca.gov

15-W; 8.0-GHz; GaN HEMT Die
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Wolfspeed’s CG2H80015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CG2H80015D-GP4
Yes
GaN on SiC
DC
8 GHz
15 W
>12 dB
70%
28 V
Discrete Bare Die
Die
Features
  • 15 W Typical PSAT
  • 28 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 8 GHz Operation
  • High Efficiency
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
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Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Ellie Cijvat – Kevin Tom – Mike Faulkner – and Henrik Sjöland – This paper describes the design – simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination.
Technical Papers & Articles
by William L. Pribble – Jim M Milligan – and Raymond S. Pengelly – Abstract from the 2006 IEEE Topical Workshop on PAs for Wireless Communications (RWS) Presentation from the 2006 IEEE Radio and Wireless Symposium in San Diego A class-E power amplifier based on a GaN HEMT cell has been designed and tested.
Technical Papers & Articles
by William L. Pribble – Jim M Milligan – and Raymond S. Pengelly – Abstract from the 2006 IEEE Topical Workshop on PAs for Wireless Communications (RWS) Presentation from the 2006 IEEE Radio and Wireless Symposium in San Diego A class-E power amplifier based on a GaN HEMT cell has been designed and tested.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by Junghwan Moon; Seunghoon Jee; Jungjoon Kim; Jangheon Kim; Bumman Kim – Operational behaviors of the class-F and class-F amplifiers are investigated. For the half-sinusoidal voltage waveform of the class-F amplifier – the amplifier should be operated in the highly saturated region – in which the phase relation between the fundamental and second harmonic currents are out-of-phase. The class-F amplifier can operate at the less saturated region to form a half sinewave current waveform. Therefore – the class-F amplifier has a bifurcated current waveform from the hard saturated operation – but the class-F amplifier operates as a switch at the saturated region for a second harmonic tuned half-sine waveform.
Technical Papers & Articles
by J. A. García – B. Bedia – R. Merlín – P. Cabral and J. C. Pedro – An experimental procedure is proposed for accurately characterizing the Vdd-to-AM and Vdd-to-PM nonlinearities in a Class E power amplifier (PA). Based on GaN HEMT technology,…
Technical Papers & Articles
by Neal Tuffy – Anding Zhu – and Thomas J. Brazil – This work outlines a design approach used for achieving highly efficient power amplification over a wide bandwidth – given narrowband passive harmonic load-pull results at a single center frequency.
Technical Papers & Articles
Paul Saad; Paolo Colantonio; Junghwan Moon; Luca Piazzon; Franco Giannini; Kristoffer Andersson; Bumman Kim; Christian Fager – This paper presents the design – implementation – and experimental results of a highly efficient concurrent dualband GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz. A bare-die approach – in conjunction with a harmonic sourcepull/load-pull simulation approach – are used in order to design and implement the harmonically tuned dual-band PA. For a continuous wave output power of 42.3 dBm the measured gain is 12 dB in the two frequency bands; while the power added efficiency is 64% in both bands. Linearized modulated measurements – using concurrently 10MHz LTE and WiMAX signals – show an average PAE of 25% and and adjacent channel leakage ratio of -48 dBc and -47 dBc at 1.8 GHz and 2.4 GHz – respectively.
Technical Papers & Articles
by Hossein Mashad Nemati – Alan L. Clarke – Steve C. Cripps – Johannes Benedikt – Paul J. Tasker – Christian Fager – Jan Grahn – and Herbert Zirath – In this paper – the efficiency of a GaN HEMT transistor and its intrinsic waveforms are measured at 0.9 GHz and investigated for load- and supply-modulation applications.
Technical Papers & Articles
by Junghwan Moon; Jungjoon Kim; Bumman Kim – This paper presents the operation principle of Class-J power amplifiers (PAs) with linear and nonlinear output capacitors (Cout s). The efficiency of a Class-J amplifier is enhanced by the nonlinear capacitance because of the harmonic generation from the nonlinear Cout – especially the second-harmonic voltage component.
Technical Papers & Articles
by Mustafa Ozen – Christer M. Andersson – Thomas Eriksson Mustafa Acar – Rik Jos – Christian Fager – This paper studies linearity of a 2 GHz – 10 Watt peak output power RF pulse width modulation (RF-PWM) based transmitter. The transmitter incorporates a tunable load network class-E PA as the final output stage. The tunable load network enables dynamic optimization of the class-E along with the duty cycle resulting in high efficiency over a wide range of output power levels. A digital predistiortion based linearization scheme is proposed to enhance the linearity of the transmitter.
Technical Papers & Articles
by Paul Saad – Luca Piazzon – Paolo Colantonio – Junghwan Moon – Franco Giannini – Kristoffer Andersson – Bumman Kim – and Christian Fager – This paper presents the design of a high peak efficiency dual-band power amplifier (PA) and how it is adopted as basic cell to implement a high average efficiency Doherty PA (DPA) – achieving a dual-band/multi-mode and efficient transmitter concurrently operating at 1.8 GHz and 2.4 GHz.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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