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CGH27015

Wolfspeed CGH27015 pill and flange package
15-W; 28-V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz
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Note: CGH27015F is Not Recommended for New Designs. Refer to CG2H40010F

Wolfspeed’s CGH27015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27015 ideal for VHF; Comms; 3G; 4G; LTE; 2.3 – 2.9-GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down flange and solder-down pill packages.

Products

CGH27015

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CGH27015

Product SKU
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH27015F
No
GaN on SiC
DC
6 GHz
15 W
14.5 dB
28%
28 V
Packaged Discrete Transistor
Flange
CGH27015P
Yes
GaN on SiC
DC
6 GHz
15 W
14.5 dB
28%
28 V
Packaged Discrete Transistor
Pill
CGH27015F-AMP
Yes
GaN on SiC
2.3 GHz
2.7 GHz
15 W
14.5 dB
28%
28 V
Evaluation Board
Flange
Features
  • VHF – 3.0 GHz Operation
  • 15 W Peak Power Capability
  • 14.5 dB Small Signal Gain
  • 2 W PAVE < 2.0% EVM
  • 28% Efficiency at 2 W Average Power
Applications
  • VHF
  • Comms
  • 3G; 4G; LTE
  • 2.3-2.9 GHz WiMAX and BWA amplifiers

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Design Files
Data Sheets
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by Junghwan Moon – Junghwan Son – Jungjoon Kim – Ildu Kim – Seunghoon Jee – Young Yun Woo – and Bumman Kim – A Doherty amplifier assisted by a supply modulator is presented using 2.14 GHz GaN HEMT saturated power amplifier (PA). A novel envelope shaping method is applied for high power-added efficiency (PAE) over a broad output power range.
Technical Papers & Articles
by Bumman Kim – Ildu Kim – Junghwan Moon – A general overview and practical design methods for supply-modulated transmitters are presented. Disadvantages of the conventional EER transmitter are discussed – such as wideband sensitivity – power leakage – and poor PAE.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman KimDemonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Knowledge Center

RF
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Aerospace & Defense

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