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CGH40025

CGH40025

Wolfspeed CGH40025
25-W RF Power GaN HEMT
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Note: CGH40025F/P are Not Recommended for New Designs. Refer to CG2H40025F/P

Wolfspeed’s CGH40025 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40025; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down; flange package and solder-down pill packages.

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Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH40025F
No
GaN on SiC
DC
6 GHz
25 W
>13 dB
62%
28 V
Packaged Discrete Transistor
Flange
CGH40025P
No
GaN on SiC
DC
6 GHz
25 W
>13 dB
62%
28 V
Packaged Discrete Transistor
Pill
CGH40025F-AMP
No
GaN on SiC
3.4 GHz
3.8 GHz
25 W
>13 dB
NA
28 V
Evaluation Board
Flange
Features
  • Up to 6 GHz Operation
  • 15 dB Small Signal Gain at 2.0 GHz
  • 13 dB Small Signal Gain at 4.0 GHz
  • 30 W typical PSAT
  • 62% Efficiency at PSAT
  • 28 V Operation
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
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Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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