Features
- Up to 6 GHz Operation
- 15 dB Small Signal Gain at 2.0 GHz
- 13 dB Small Signal Gain at 4.0 GHz
- 30 W typical PSAT
- 62% Efficiency at PSAT
- 28 V Operation
CGH40025
25-W RF Power GaN HEMT
Note: CGH40025F/P are Not Recommended for New Designs. Refer to CG2H40025F/P
Wolfspeed’s CGH40025 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40025; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down; flange package and solder-down pill packages.
Products
CGH40025
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CGH40025
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGH40025F | No | GaN on SiC | DC | 6 GHz | 25 W | >13 dB | 62% | 28 V | Packaged Discrete Transistor | Flange | |||
CGH40025P | No | GaN on SiC | DC | 6 GHz | 25 W | >13 dB | 62% | 28 V | Packaged Discrete Transistor | Pill | |||
CGH40025F-AMP | No | GaN on SiC | 3.4 GHz | 3.8 GHz | 25 W | >13 dB | 62% | 28 V | Evaluation Board | Flange |
Applications
- 2-Way Private Radio
- Broadband Amplifiers
- Cellular Infrastructure
- Test Instrumentation
- Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Design Files | |
| Data Sheets | |
| S-parameters | |
| S-parameters | |
| S-parameters | |
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
| Sales Terms |
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