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CGH40120

CGH40120

Wolfspeed CGH40120F 120-W RF Power GaN HEMT
120-W RF Power GaN HEMT
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Note: CGH40120F is Not Recommended for New Designs. Refer to CCG2H40120F

Wolfspeed’s CGH40120 is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT). The CGH40120; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40120 ideal for linear and compressed amplifier circuits. The transistor is available in a metal-ceramic pill and flange package.

Product SKU
Buy Online
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH40120P
Yes
GaN on SiC
3 GHz
120 W
>15 dB
70%
28 V
Packaged Discrete Transistor
Pill
CGH40120F-AMP
No
GaN on SiC
1.2 GHz
1.4 GHz
120 W
>15 dB
NA
28 V
Evaluation Board
Flange
CGH40120F
No
GaN on SiC
DC
3 GHz
120 W
>15 dB
70%
28 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH40120P
Yes
GaN on SiC
3 GHz
120 W
>15 dB
70%
28 V
Packaged Discrete Transistor
Pill
CGH40120F-AMP
No
GaN on SiC
1.2 GHz
1.4 GHz
120 W
>15 dB
NA
28 V
Evaluation Board
Flange
CGH40120F
No
GaN on SiC
DC
3 GHz
120 W
>15 dB
70%
28 V
Evaluation Board
Flange
Features
  • Up to 2.5 GHz Operation
  • 20 dB Small Signal Gain at 1.0 GHz
  • 15 dB Small Signal Gain at 2.0 GHz
  • 120 W Typical PSAT
  • 70% Efficiency at PSAT
  • 28 V Operation
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
Apply Filters
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Junghwan Son – Ildu Kim – Junghwan Moon – Juyeon Lee – Bummam Kim – An asymmetric Doherty Power Amplifier (ADPA) is introduced using a new output combining circuit for easy of implementation with a large matching tolerance. The proposed APDA has been implemented using GaN HEMT devices at 2.6 GHz for WiMAX signal with 5MHz bandwidth and 8.3 dB peak to average power ratio.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Simon Wood – Carl Platis – Don Farrell – Brad Millon – Bill Pribble – Peter Smith – Ray Pengelly – and Jim Milligan – This article discusses various uses of Wolfspeed’s GaN HEMTs (CGH21120 – CGH25120 – CGH40120) in standard and novel amplifier topologies. It includes the practical use of Wolfspeed’s proprietary large signal models.
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by MHD. Tareq Arnous; Khaled Bathich; Sebastian Preis; Georg Boeck – In this paper – the design – implementation – and experimental results of a 200 W high efficiency broadband GaN HEMT power amplifier (PA) are presented. Power combining was used to combine the outputs of two individual octave bandwidth 100 W power amplifiers. Optimum fundamental and harmonic load impedances were obtained using load-pull simulations for the active device across the design band. A systematic approach was applied for the design of wideband output and input matching networks.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Junghwan Son – Ildu Kim – Junghwan Moon – Juyeon Lee – Bummam Kim – An asymmetric Doherty Power Amplifier (ADPA) is introduced using a new output combining circuit for easy of implementation with a large matching tolerance. The proposed APDA has been implemented using GaN HEMT devices at 2.6 GHz for WiMAX signal with 5MHz bandwidth and 8.3 dB peak to average power ratio.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Simon Wood – Carl Platis – Don Farrell – Brad Millon – Bill Pribble – Peter Smith – Ray Pengelly – and Jim Milligan – This article discusses various uses of Wolfspeed’s GaN HEMTs (CGH21120 – CGH25120 – CGH40120) in standard and novel amplifier topologies. It includes the practical use of Wolfspeed’s proprietary large signal models.
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by MHD. Tareq Arnous; Khaled Bathich; Sebastian Preis; Georg Boeck – In this paper – the design – implementation – and experimental results of a 200 W high efficiency broadband GaN HEMT power amplifier (PA) are presented. Power combining was used to combine the outputs of two individual octave bandwidth 100 W power amplifiers. Optimum fundamental and harmonic load impedances were obtained using load-pull simulations for the active device across the design band. A systematic approach was applied for the design of wideband output and input matching networks.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Catalog
Sales Terms
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