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CGH55030F1/P1

CGH55030F1/P1

Wolfspeed CGH55030F1/P1 30W 5500-5800MHz 28V GaN HEMT
30-W; 5500 – 5800-MHz; 28-V; GaN HEMT for WiMAX
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Wolfspeed’s CGH55030F1/CGH55030P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH55030F1/CGH55030P1 ideal for 5.5 – 5.8-GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages. Based on appropriate external match adjustment; the CGH55030F1/CGH55030P1 is suitable for 4.9 – 5.5-GHz applications as well.

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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH55030F1
Yes
GaN on SiC
DC
6 GHz
30 W
10 dB
25%
28 V
Packaged Discrete Transistor
Flange
CGH55030P1
Yes
GaN on SiC
DC
6 GHz
30 W
10 dB
25%
28 V
Packaged Discrete Transistor
Pill
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH55030F1
Yes
GaN on SiC
DC
6 GHz
30 W
10 dB
25%
28 V
Packaged Discrete Transistor
Flange
CGH55030P1
Yes
GaN on SiC
DC
6 GHz
30 W
10 dB
25%
28 V
Packaged Discrete Transistor
Pill
Features
  • 300 MHz Instantaneous Bandwidth
  • 30 W Peak Power Capability
  • 10 dB Small Signal Gain
  • 4 W PAVE < 2.0% EVM
  • 25% Efficiency at 4 W Average Power
Applications
  • WiMAX Fixed Access 802.16-2004 OFDM Applications
  • Multi-carrier DOCSIS Applications
Apply Filters
Document Type
Document Name
Version
Application Notes
Version: a
Application Notes
Version: 1.0
Application Notes
Version: a
Application Notes
Version: c
Application Notes
Version: a
Data Sheets
Version: 4.1
Design Files
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Version: Design
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Cree GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Version: Design
Technical Papers & Articles
by Bradley J. Millon – Simon M. Wood – Raymond S. Pengelly – 2.5 and 5-watt average power (15 and 30-watt peak power) GaN HEMT amplifiers for WiMAX signal protocols have been designed and fabricated for use in the 5.5 to 5.8-GHz band.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Product Ecology
CG2H40010F – CGH27015F – CGH27030F – CGH35015F – CGH35030F – CGH40010F – CGH40025F – CGH55015F1 – CGH55015F2 – CGH55030F1 – CGH55030F2 – CGHV40030F
Version: 1.0
Product Ecology
CG2H40010F – CG2H40025F – CGH27015F – CGH27030F – CGH35015F – CGH35030F – CGH40010F – CGH40025F – CGH55015F1 – CGH55015F2 – CGH55030F1 – CGH55030F2 – CGHV40030F
Version: 1.0
Product Ecology
CG2H40035 – CGH27015P – CGH27030P – CGH35015P – CGH40010P – CGH40025P – CGH55015P1 – CGH55015P2 – CGH55030P1 – CGH55030P2 – CGHV40030P
Version: 1.0
Product Ecology
CG2H40010P – CG2H40025P – CGH27015P – CGH27030P – CGH35015P – CGH40010P – CGH40025P – CGH55015P1 – CGH55015P2 – CGH55030P1 – CGH55030P2 – CGHV40030P
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
Document Type
Document Name
Version
Application Notes
Version: a
Application Notes
Version: 1.0
Application Notes
Version: a
Application Notes
Version: c
Application Notes
Version: a
Data Sheets
Version: 4.1
Design Files
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Version: Design
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Cree GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Version: Design
Technical Papers & Articles
by Bradley J. Millon – Simon M. Wood – Raymond S. Pengelly – 2.5 and 5-watt average power (15 and 30-watt peak power) GaN HEMT amplifiers for WiMAX signal protocols have been designed and fabricated for use in the 5.5 to 5.8-GHz band.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Product Ecology
CG2H40010F – CGH27015F – CGH27030F – CGH35015F – CGH35030F – CGH40010F – CGH40025F – CGH55015F1 – CGH55015F2 – CGH55030F1 – CGH55030F2 – CGHV40030F
Version: 1.0
Product Ecology
CG2H40010F – CG2H40025F – CGH27015F – CGH27030F – CGH35015F – CGH35030F – CGH40010F – CGH40025F – CGH55015F1 – CGH55015F2 – CGH55030F1 – CGH55030F2 – CGHV40030F
Version: 1.0
Product Ecology
CG2H40035 – CGH27015P – CGH27030P – CGH35015P – CGH40010P – CGH40025P – CGH55015P1 – CGH55015P2 – CGH55030P1 – CGH55030P2 – CGHV40030P
Version: 1.0
Product Ecology
CG2H40010P – CG2H40025P – CGH27015P – CGH27030P – CGH35015P – CGH40010P – CGH40025P – CGH55015P1 – CGH55015P2 – CGH55030P1 – CGH55030P2 – CGHV40030P
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
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