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CGHV14250

Wolfspeed RF CGHV14250 flange and pill package
250-W; DC – 1600-MHz; GaN HEMT for L-Band Radar Systems
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Wolfspeed’s CGHV14250 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14250 ideal for 1.2 – 1.4-GHz L-Band radar-amplifier applications. The transistor could be utilized for band-specific applications ranging from UHF through 1600 MHz. The package options are ceramic/metal flange and pill package.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV14250F-AMP
Yes
GaN on SiC
DC
1.6 GHz
250 W
18 dB
77%
50 V
Evaluation Board
Flange
CGHV14250P
Yes
GaN on SiC
DC
1.6 GHz
250 W
18 dB
77%
50 V
Packaged Discrete Transistor
Pill
CGHV14250F
Yes
GaN on SiC
DC
1.6 GHz
250 W
18 dB
77%
50 V
Packaged Discrete Transistor
Flange
Features
  • FET Tuning range UHF through 1800 MHz
  • 330 W Typical Output Power
  • 18 dB Power Gain
  • 77 % Typical Drain Efficiency
  • < 0.3 dB Pulsed Amplitude Droop
  • Internally pre-matched on input; unmatched output
Applications
  • L-Band Radar Amplifiers
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Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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