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CGHV14500

CGHV14500

cghv14500f-440117_and_cghv14500p-440133_creeimg_1
500-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems
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Wolfspeed’s CGHV14500 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14500 ideal for 1.2 – 1.4-GHz L-Band radar-amplifier applications. The transistor could be utilized for band-specific applications ranging from UHF through 1800 MHz. The package options are ceramic/metal flange and pill package.

Product SKU
Buy Online
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV14500P
Yes
GaN on SiC
1.2 GHz
1.4 GHz
500 W
16 dB
68%
50 V
Packaged Discrete Transistor
Pill
CGHV14500F
Yes
GaN on SiC
1.2 GHz
1.4 GHz
500 W
16 dB
68%
50 V
Packaged Discrete Transistor
Flange
CGHV14500F-AMP
Yes
GaN on SiC
1.2 GHz
1.4 GHz
500 W
16 dB
NA
50 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV14500P
Yes
GaN on SiC
1.2 GHz
1.4 GHz
500 W
16 dB
68%
50 V
Packaged Discrete Transistor
Pill
CGHV14500F
Yes
GaN on SiC
1.2 GHz
1.4 GHz
500 W
16 dB
68%
50 V
Packaged Discrete Transistor
Flange
CGHV14500F-AMP
Yes
GaN on SiC
1.2 GHz
1.4 GHz
500 W
16 dB
NA
50 V
Evaluation Board
Flange
Features
  • FET tuning range UHF through 1800 MHz
  • 500 W Typical Output Power
  • 16 dB Power Gain
  • 68% Typical Drain Efficiency
  • <0.3 dB Pulsed Amplitude Droop
  • Internally pre-matched on input; unmatched output
Applications
  • L-Band Radar Amplifiers
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Document Type
Document Name
Application Notes
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Ecology
CGH21240F – CGHV141K0F – CGHV14500F – CGHV14800F
Product Ecology
CGHV14500P
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Ecology
CGH21240F – CGHV141K0F – CGHV14500F – CGHV14800F
Product Ecology
CGHV14500P
Product Catalog
Sales Terms
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