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CGHV1F025

CGHV1F025

Wolfspeed CGHV1F025S 25-W DC - 15-GHz 40-V GaN HEMT
25-W; DC – 15-GHz; 40-V; GaN HEMT
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Wolfspeed’s CGHV1F025S is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities. The device can be deployed for L; S; C; X and Ku-band amplifier applications. The data sheet specifications are based on an X-Band (8.9 – 9.6-GHz) amplifier. The CGHV1F025S operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm; surface-mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 40-V to as low as 20-V VDD; maintaining high gain and efficiency.

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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV1F025S
Yes
GaN on SiC
DC
15 GHz
25 W
11 dB
51%
40 V
Packaged Discrete Transistor
Surface Mount
CGHV1F025S-AMP1
Yes
GaN on SiC
8.9 GHz
9.6 GHz
25 W
11 dB
NA
40 V
Evaluation Board
Surface Mount
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV1F025S
Yes
GaN on SiC
DC
15 GHz
25 W
11 dB
51%
40 V
Packaged Discrete Transistor
Surface Mount
CGHV1F025S-AMP1
Yes
GaN on SiC
8.9 GHz
9.6 GHz
25 W
11 dB
NA
40 V
Evaluation Board
Surface Mount
Features
  • Up to 15 GHz Operation
  • 25 W Typical Output Power
  • 11 dB Gain at 9.4 GHz
  • Application circuit for 8.9 – 9.6 GHz
Applications
  • L; S; C; X and Ku-Band amplifiers
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Document Type
Document Name
Version
Application Notes
Version: a
Application Notes
Version: 1.0
Application Notes
Version: 1
Data Sheets
Version: 4.5
S-parameters
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Cree – Inc.
Randall D. Lewis – Northrop Grumman Corp.
Benjamin M. Decker – Northrop Grumman Corp.
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Product Ecology
CGH27030S – CGH40006S – CGHV1F006S – CGHV1F025S – CGHV27015S – CGHV27030S
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
Document Type
Document Name
Version
Application Notes
Version: a
Application Notes
Version: 1.0
Application Notes
Version: 1
Data Sheets
Version: 4.5
S-parameters
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Cree – Inc.
Randall D. Lewis – Northrop Grumman Corp.
Benjamin M. Decker – Northrop Grumman Corp.
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Product Ecology
CGH27030S – CGH40006S – CGHV1F006S – CGHV1F025S – CGHV27015S – CGHV27030S
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
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