Contact
中文
Home
CGHV27060

CGHV27060

Wolfspeed CGHV27060MP GaN HEMT
60-W; DC to 2700-MHz; 50-V; GaN HEMT for LTE and Pulse-Radar Applications
Request Model Access

Wolfspeed’s CGHV27060MP is a 60-W gallium-nitride (GaN) high-electron-mobility transistor (HEMT) housed in a small; plastic SMT package 4.4-mm x 6.5-mm. The transistor is a broadband device with no internal input or output match; which allows for the agility to apply to a wide range of frequencies from UHF through 2.7 GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF; L-band or low S-band (<2.7 GHz). Additionally; the transistor is well suited for LTE micro-base-station amplifiers in the power class of 10 to 15-W average power in high-efficiency topologies such as Class A/B; F or Doherty amplifiers. The CGHV27060MP typical performance described in the data sheet is derived from a Class A/B reference design from 2.5 to 2.7 GHz.

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV27060MP-AMP4
Yes
GaN on SiC
DC
1 GHz
60 W
16.5 dB
NA
Evaluation Board
Plastic
CGHV27060MP-AMP1
Yes
GaN on SiC
2.5 GHz
2.7 GHz
60 W
16.5 dB
NA
50 V
Evaluation Board
Plastic
CGHV27060MP-AMP3
Yes
GaN on SiC
0.8 GHz
2.7 GHz
60 W
16.5 dB
NA
50 V
Evaluation Board
Plastic
CGHV27060MP
Yes
GaN on SiC
DC
2.7 GHz
60 W
16.5 dB
64%
50 V
Packaged Discrete Transistor
Plastic
Features
  • From UHF thru 2.7GHz
  • 16.5 dB Gain at Pulsed PSAT
  • 70% Efficiency at Pulsed PSAT
  • 85 W at Pulsed PSAT
  • 18 dB Gain at Linear PAVE = 14 W
  • -35 dBc ACLR at Linear PAVE = 14 W
  • 33% Efficiency at Linear PAVE = 14 W
  • High Degree of DPD Correction Can be Applied
Applications
  • Pulsed applications at UHF; L Band; or low S Band. Also; Communication Amplifiers with 10 to 15 W avg power in high efficiency topologies such as Class A/B; F; or Doherty
Apply Filters
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Design Files
Design Files
S-parameters
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

RF
|
Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading 
 Technical Articles
Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2022 Wolfspeed, Inc.