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CGHV40050

CGHV40050

Wolfspeed CGHV40050F 50-W DC to 4.0-GHz 50-V GaN HEMT
50-W; DC – 4.0-GHz; 50-V; GaN HEMT
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Wolfspeed’s CGHV40050 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40050; operating from a 50-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high-efficiency; high-gain and wide-bandwidth capabilities; making the CGHV40050 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange and pill package.

Product SKU
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV40050P
Yes
GaN on SiC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Pill
CGHV40050F
Yes
GaN on SiC
DC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Flange
CGHV40050F-AMP
Yes
GaN on SiC
0.8 GHz
2 GHz
50 W
16 dB
NA
50 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV40050P
Yes
GaN on SiC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Pill
CGHV40050F
Yes
GaN on SiC
DC
4 GHz
50 W
16 dB
53%
50 V
Packaged Discrete Transistor
Flange
CGHV40050F-AMP
Yes
GaN on SiC
0.8 GHz
2 GHz
50 W
16 dB
NA
50 V
Evaluation Board
Flange
Features
  • Up to 4 GHz Operation
  • 77 W Typical Output Power
  • 17.5 dB Small Signal Gain at 1.8 GHz
  • Application Circuit for 0.8 – 2.0 GHz
  • 53 % Efficiency at PSAT
  • 50 V Operation
Applications
  • Narrow Band UHF
  • L and S-Band
  • Multi-octave bandwidth amplifiers up to 4 GHz
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Document Type
Document Name
Application Notes
Data Sheets
Design Files
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Data Sheets
Design Files
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
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