5-W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers
Request Model Access

CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 – 2.7 GHz. The transistor is available in a 6 leaded flange package.

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Recommended For New Design?
Frequency Min
Frequency Max
Peak Output Power
Operating Voltage
Package Type
GaN on SiC
0.5 GHz
2.7 GHz
5 W
20 dB
50 V
Evaluation Board
GaN on SiC
0.5 GHz
2.4 GHz
5 W
20 dB
50 V
Packaged MMIC
  • Up to 2.7 GHz Operation
  • 8 W Typical Output Power
  • 20 dB Small Signal Gain
  • Application Circuit for 0.5 – 2.7 GHz
  • 50% Efficiency
  • 50 V Operation
  • Amplifier Predriver from 0.5 – 2.7 GHz
Apply Filters
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Operating at 50 V and 100 W
Application Notes
Data Sheets
Design Files
Design Files
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Catalog
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

Silicon Carbide

SiC vs GaN vs Si: Find The Right Fit For Your Application

Explore Wolfspeed Silicon Carbide Power and GaN on Silicon Carbide RF solutions to enable your high performance systems.
Continue Reading 

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading 
 Technical Articles
Wolfspeed Logo
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2022 Wolfspeed, Inc.