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GTVA104001FA-V1

High Power RF GaN on SiC HEMT 400 W; 50 V; 960 – 1215 MHz
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The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequecy band. It features input matching; high efficiency; and a thermally-enhanced surface mount package with earless flange.

GTVA104001FA-V1

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA104001FA-V1
Yes
GaN on SiC
0.96 GHz
1.215 GHz
400 W
19 dB
70%
50 V
Packaged Discrete Transistor
Earless
Features
  • GaN on SiC HEMT technology
  • Broadband internal input matching
  • Typical Pulsed CW performance; 960 – 1215 MHz; 50V
    • Output power = 410 W
    • Drain Efficiency = 70 %
    • Gain = 19 dB
    • Pulse width = 128 μs
    • Duty cycle = 10 %
  • Pb-free and RoHS compliant
Applications
  • L-Band Radar Amplifiers

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