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GTVA104001FA V1

GTVA104001FA-V1

High Power RF GaN on SiC HEMT 400 W; 50 V; 960 – 1215 MHz
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The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequecy band. It features input matching; high efficiency; and a thermally-enhanced surface mount package with earless flange.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA104001FA-V1
Yes
GaN on SiC
0.96 GHz
1.215 GHz
400 W
19 dB
70%
50 V
Packaged Discrete Transistor
Earless
Features
  • GaN on SiC HEMT technology
  • Broadband internal input matching
  • Typical Pulsed CW performance; 960 – 1215 MHz; 50V
    • Output power = 410 W
    • Drain Efficiency = 70 %
    • Gain = 19 dB
    • Pulse width = 128 μs
    • Duty cycle = 10 %
  • Pb-free and RoHS compliant
Applications
  • L-Band Radar Amplifiers
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RF
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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