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GTVA123501FA V1

GTVA123501FA-V1

High Power RF GaN on SiC HEMT 350 W; 50 V; 1200 - 1400 MHz

The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching; high efficiency; and a thermally-enhanced surface mount package with earless flange.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA123501FA-V1
Yes
GaN on SiC
1.2 GHz
1.4 GHz
350 W
18 dB
71%
50 V
Packaged Discrete Transistor
Earless
Features
  • Broadband internal input matching; Typical Pulsed CW performance; 1200 – 1400 MHz; 50V; Output power 350 W; Drain Efficiency 70 %; Gain 18 dB; Pulse width 300 μs; Duty cycle 10%; Pb-free and RoHS compliant
Applications
  • L-Band Radar Amplifiers
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RF
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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