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GTVA12600

GTVA12600

h-36248-2_h-37248-2_1_1
High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz
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The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the 1200 to 1400 MHz frequecy band. They feature input matching; high efficiency; and thermally-enhanced packages.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA126001FC-V1
Yes
GaN on SiC
1.2 GHz
1.4 GHz
600 W
20 dB
63%
50 V
Packaged Discrete Transistor
Earless
GTVA126001EC-V1
Yes
GaN on SiC
1.2 GHz
1.4 GHz
600 W
20 dB
63%
50 V
Packaged Discrete Transistor
Bolt Down
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA126001FC-V1
Yes
GaN on SiC
1.2 GHz
1.4 GHz
600 W
20 dB
63%
50 V
Packaged Discrete Transistor
Earless
GTVA126001EC-V1
Yes
GaN on SiC
1.2 GHz
1.4 GHz
600 W
20 dB
63%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Input matched
  • Typical pulsed CW performance (class AB); 1200 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power (P3dB) = 600 W; Drain efficiency = 65%; Gain = 18 dB
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 μs pulse width; 10% duty cycle; VDD = 50 V; IDQ = 100 mA
  • Human Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001)
  • Pb-free and RoHS compliant
Applications
  • Radar Amplifiers
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