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PTVA030121EA-V1

High Power RF LDMOS FET 12 W; 50 V; 390 – 450 MHz

The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA030121EA-V1
Yes
LDMOS
0.39 GHz
0.45 GHz
12 W
25 dB
69%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Unmatched input and output
  • Integrated ESD protection
  • Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
  • High gain; low thermal resistance
  • Excellent ruggedness
  • Capable of withstanding a 13:1 load mismatch at50V; 12W; CW conditions
  • Pb-free and RoHS compliant
Applications
  • Power Amplifiers in the 390 to 450 MHz frequency band
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Knowledge Center

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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