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PTVA04350

High Power RF LDMOS FETs 350 W; 50 V; 470 – 860 MHz

The PTVA043502EC and PTVA043502FC are LDMOS FETs designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with bolt-down and earless flanges. Manufactured with Wolfspeed’s advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA043502EC-V1
Yes
LDMOS
DC
1.35 GHz
350 W
18 dB
30%
50 V
Packaged Discrete Transistor
Bolt Down
PTVA043502FC-V1
Yes
LDMOS
DC
1.35 GHz
350 W
18 dB
30%
50 V
Packaged Discrete Transistor
Earless
Features
  • Input matched
  • Integrated ESD protection
  • Low thermal resistance
  • High gain
  • Capable of handling 10:1 VSWR @50 V; 70 W average power (DVB-T 8K OFDM; 64QAM) Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
Applications
  • Power Amplifiers in the 470 – 860 MHz frequency band
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Knowledge Center

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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