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PTVA047002EV-V1

High Power RF LDMOS FET 700 W; 50 V; 470 – 806 MHz

The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA047002EV-V1
Yes
LDMOS
0.47 GHz
0.806 GHz
700 W
17.5 dB
29%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Input matched
  • Integrated ESD protection
  • Low thermal resistance
  • High gain
  • Thermally enhanced package
  • RoHS compliant
  • Capable of withstanding a 10:1 VSWR at 130 W average power under DVB-T signal condition
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
Applications
  • Power Amplifiers in the 470 to 806 MHz frequency band
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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