Skip to Main Content
Contact
浏览产品 (中文)

PTVA101K02EV-V1

High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz

The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

PTVA101K02EV-V1

Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA101K02EV-V1
Yes
LDMOS
1.03 GHz
1.09 GHz
900 W
18 dB
65%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Broadband input matching
  • High gain and effi ciency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S pulse condition; (32μS ON / 18μS OFF) X 80;LTDF = 6.4%.
Applications
  • Power Amplifiers in the 1030 to 1090 MHz frequency band

Documents

Apply Filters
Document Type
Document Name
Data Sheets
Reference Designs
Product Catalog
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.