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PTVA104501EH-V1

High Power RF LDMOS FET 450 W; 50 V; 960 – 1215 MHz

The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA104501EH-V1
Yes
LDMOS
0.96 GHz
1.215 GHz
450 W
17.5 dB
58%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Broadband internal input and output matching
  • High gain and efficiency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS compliant
Applications
  • Power Amplifiers in the 960 to 1215 MHz frequency band
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Knowledge Center

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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