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PTVA120501EA-V1

High Power RF LDMOS FET 50 W; 50 V; 1200 – 1400 MHz

The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA120501EA-V1
Yes
LDMOS
1.2 GHz
1.4 GHz
50 W
17 dB
50%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Broadband input matching
  • High gain and efficiency
  • Typical Pulsed CW performance; 1200 – 1400 MHz
  • 50 V
  • 300 μs pulse width
  • 10 % duty cycle
  • Output power at P1dB 54 W
  • Efficiency 55%
  • Gain 16 dB
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
Applications
  • Power Amplifiers in the 1200 to 1400 MHz frequency band; Radar
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Knowledge Center

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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