Skip to Main Content
Contact
浏览产品 (中文)

PTVA120501EA-V1

High Power RF LDMOS FET 50 W; 50 V; 1200 – 1400 MHz

The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

PTVA120501EA-V1

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA120501EA-V1
Yes
LDMOS
1.2 GHz
1.4 GHz
50 W
17 dB
50%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Broadband input matching
  • High gain and efficiency
  • Typical Pulsed CW performance; 1200 – 1400 MHz
  • 50 V
  • 300 μs pulse width
  • 10 % duty cycle
  • Output power at P1dB 54 W
  • Efficiency 55%
  • Gain 16 dB
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
Applications
  • Power Amplifiers in the 1200 to 1400 MHz frequency band; Radar

Documents

Apply Filters
Document Type
Document Name
Data Sheets
Reference Designs
Product Catalog
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.