Features
- Broadband internal input and output matching
- High gain and efficiency
- Integrated ESD protection
- Low thermal resistance
- Excellent ruggedness
- Pb-free and RoHS compliant
PTVA12350
High Power RF LDMOS FETs 350 W; 50 V; 1200 – 1400 MHz
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Wolfspeed’s advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.
Products
PTVA12350
No filters selected, showing all 2 products
PTVA12350
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
PTVA123501FC-V1 | Yes | LDMOS | 1.2 GHz | 1.4 GHz | 350 W | 17 dB | 55% | 50 V | Packaged Discrete Transistor | Earless | ||
PTVA123501EC-V2 | Yes | LDMOS | 1.2 GHz | 1.4 GHz | 350 W | 17 dB | 55% | 50 V | Packaged Discrete Transistor | Bolt Down |
Applications
- Power Amplifiers in the 1200 to 1400 MHz frequency band; Radar
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
Documents
Apply Filters
Document Type | Document Name |
|---|---|
| Data Sheets | |
| Reference Designs | |
| Product Catalog | |
| Sales Terms |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
SiC vs GaN vs Si: Find The Right Fit For Your Application
Explore Wolfspeed Silicon Carbide Power and GaN on Silicon Carbide RF solutions to enable your high performance systems.