Features
- 2.5 – 2.7 GHz Operation
- 30 W Typical Output Power
- 20 dB Gain at 5 W PAVE
- -34 dBc ACLR at 5 W PAVE
- 30% efficiency at 5 W PAVE
- High degree of APD and DPD correction can be applied
CGHV27030
30 W; DC - 6.0 GHz; GaN HEMT
The CGHV27030S is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency; high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz; 1200-1400 MHz; 1800-2200 MHz; 2500-2700 MHz; and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz; including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package.
Products
CGHV27030
No filters selected, showing all 6 products
CGHV27030
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV27030S-AMP2 | Yes | GaN on SiC | 2.5 GHz | 2.7 GHz | 30 W | 21 dB | 32% | 28 V | Evaluation Board | Surface Mount | ||||
CGHV27030S-AMP3 | Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 21 dB | 32% | 28 V | Evaluation Board | Surface Mount | ||||
CGHV27030S-AMP4 | Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 21 dB | 32% | 50 V | Evaluation Board | Surface Mount | ||||
CGHV27030S-AMP5 | Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 30 W | 21 dB | 32% | 50 V | Evaluation Board | Surface Mount | ||||
CGHV27030S-AMP1 | Yes | GaN on SiC | 2.5 GHz | 2.7 GHz | 30 W | 21 dB | 32% | 50 V | Evaluation Board | Surface Mount | ||||
CGHV27030S | Yes | GaN on SiC | DC | 6 GHz | 30 W | 21 dB | 32% | 50 V | Packaged Discrete Transistor | Surface Mount |
Applications
- Cellular Infrastructure
- Tactical Communications
- L-Band Radar
- S-Band Radar
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Application Notes | |
| Design Files | |
| Design Files | |
| Design Files | |
| Design Files | |
| Design Files | |
| Data Sheets | |
| S-parameters | |
| Technical Papers & Articles | by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
|
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
| Product Catalog | |
| Sales Terms |
Knowledge Center
Continue Reading Technical Articles
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Continue Reading Technical Articles
Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading Technical Articles