Wolfspeed’s CGHV27060MP is a 60-W gallium-nitride (GaN) high-electron-mobility transistor (HEMT) housed in a small; plastic SMT package 4.4-mm x 6.5-mm. The transistor is a broadband device with no internal input or output match; which allows for the agility to apply to a wide range of frequencies from UHF through 2.7 GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF; L-band or low S-band (<2.7 GHz). Additionally; the transistor is well suited for LTE micro-base-station amplifiers in the power class of 10 to 15-W average power in high-efficiency topologies such as Class A/B; F or Doherty amplifiers. The CGHV27060MP typical performance described in the data sheet is derived from a Class A/B reference design from 2.5 to 2.7 GHz.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
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CGHV27060MP-AMP4 | Yes | GaN on SiC | DC | 1 GHz | 60 W | 16.5 dB | 60% | Evaluation Board | Plastic | |||||
CGHV27060MP-AMP1 | Yes | GaN on SiC | 2.5 GHz | 2.7 GHz | 60 W | 16.5 dB | 64% | 50 V | Evaluation Board | Plastic | ||||
CGHV27060MP-AMP3 | Yes | GaN on SiC | 0.8 GHz | 2.7 GHz | 60 W | 16.5 dB | 55% | 50 V | Evaluation Board | Plastic | ||||
CGHV27060MP | Yes | GaN on SiC | DC | 2.7 GHz | 60 W | 16.5 dB | 64% | 50 V | Packaged Discrete Transistor | Plastic |
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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