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CGHV31500

CGHV31500

Wolfspeed CGHV31500F1
500W, 2.7 - 3.1 GHz, GaN IMFET
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The CGHV31500F1 is a gallium-nitride (GaN), fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV31500F-AMP
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
12.75 dB
NA
50 V
Evaluation Board
Flange
CGHV31500F
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
12.75 dB
60%
50 V
Packaged Discrete Transistor
Flange
CGHV31500F1
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
13 dB
>65%
50 V
Packaged Discrete Transistor
Flange
CGHV31500F1-AMP
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
13 dB
>65%
50 V
Evaluation Board
Flange
Features
  • 2.7 – 3.1 GHz Operation
  • 650 W Typical Output Power
  • 12 dB Power Gain
  • 65% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop
Applications
  • S-Band Radar amplifiers
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Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

RF
|
Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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