Features
- 2.7 – 3.1 GHz Operation
- 650 W Typical Output Power
- 12 dB Power Gain
- 65% Typical Drain Efficiency
- 50 Ohm Internally Matched
- <0.3 dB Pulsed Amplitude Droop
CGHV31500
500W, 2.7 - 3.1 GHz, GaN IMFET
The CGHV31500F1 is a gallium-nitride (GaN), fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle.
Products
CGHV31500
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CGHV31500
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV31500F-AMP | Yes | GaN on SiC | 2.7 GHz | 3.1 GHz | 500 W | 12.75 dB | 60% | 50 V | Evaluation Board | Flange | ||||
CGHV31500F | Yes | GaN on SiC | 2.7 GHz | 3.1 GHz | 500 W | 12.75 dB | 60% | 50 V | Packaged Discrete Transistor | Flange | ||||
CGHV31500F1 | Yes | GaN on SiC | 2.7 GHz | 3.1 GHz | 500 W | 13 dB | >65% | 50 V | Packaged Discrete Transistor | Flange | ||||
CGHV31500F1-AMP | Yes | GaN on SiC | 2.7 GHz | 3.1 GHz | 500 W | 13 dB | >65% | 50 V | Evaluation Board | Flange |
Applications
- S-Band Radar amplifiers
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Documents
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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