Features
- Up to 6 GHz Operation
- 30 W Typical Output Power
- 16 dB Gain
- Application circuit for 0.96 – 1.4 GHz
- 70% Efficiency at PSAT
- 50 V Operation
CGHV40030
30-W; DC – 6-GHz; 50-V; GaN HEMT
Wolfspeed’s CGHV40030 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities. The device can be deployed for L; S and C-Band amplifier applications. The data sheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50-volt rail circuit while housed in a 2-lead flange or pill package.
Products
CGHV40030
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CGHV40030
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV40030P | Yes | GaN on SiC | DC | 6 GHz | 30 W | 16 dB | 70% | 50 V | Packaged Discrete Transistor | Pill | ||||
CGHV40030F-AMP2 | Yes | GaN on SiC | 0.5 GHz | 2.7 GHz | 30 W | 16 dB | 70% | 50 V | Evaluation Board | Flange | ||||
CGHV40030F | Yes | GaN on SiC | DC | 6 GHz | 30 W | 16 dB | 70% | 50 V | Packaged Discrete Transistor | Flange |
Applications
- L; S and C-Band amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Application Notes | |
| Application Notes | Operating at 50 V and 100 W
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| Design Files | |
| Data Sheets | |
| S-parameters | |
| S-parameters | |
| Technical Papers & Articles | by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
| Sales Terms |
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