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CMPA0060025

CMPA0060025

cmpa0060025f
25-W; DC – 6.0-GHz; GaN MMIC Power Amplifier
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Wolfspeed’s CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths to be achieved in a small-footprint.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA0060025D
GaN on SiC
6 GHz
25 W
18 dB
33%
50 V
MMIC Bare Die
Die
CMPA0060025F
GaN on SiC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
CMPA0060025F-AMP
GaN on SiC
6 GHz
25 W
17 dB
NA
50 V
Evaluation Board
Flange
CMPA0060025F1
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
CMPA0060025F1-AMP
GaN on SiC
DC
6 GHz
25 W
17 dB
NA
50 V
Evaluation Board
Flange
Product SKU
Buy Online
Data Sheet
Request Sample
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA0060025D
GaN on SiC
6 GHz
25 W
18 dB
33%
50 V
MMIC Bare Die
Die
CMPA0060025F
GaN on SiC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
CMPA0060025F-AMP
GaN on SiC
6 GHz
25 W
17 dB
NA
50 V
Evaluation Board
Flange
CMPA0060025F1
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Packaged MMIC
Flange
CMPA0060025F1-AMP
GaN on SiC
DC
6 GHz
25 W
17 dB
NA
50 V
Evaluation Board
Flange
Features
  • 18 dB Small Signal Gain
  • 30 W Typical PSAT
  • Operation up to 50 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Ultra Broadband Amplifiers
  • Test Instrumentation
  • EMC Amplifier Drivers
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Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Data Sheets
Design Files
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Data Sheets
Design Files
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
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