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15 W; 2.7 to 3.5 GHz; 50 V; GaN MMIC Power Amplifier
Wolfspeed’s CMPA2735015 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.



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Frequency Min
Frequency Max
Peak Output Power
Operating Voltage
Package Type
GaN on SiC
2.7 GHz
3.5 GHz
15 W
32 dB
50 V
MMIC Bare Die
GaN on SiC
2.7 GHz
3.5 GHz
15 W
33 dB
50 V
Packaged MMIC
  • 35 dB Small Signal Gain
  • 20 W Typical PSAT
  • Operation up to 50 V
  • High Breakdown Voltage
  • High Temperature Operation
  • Civil and Military Pulsed Radar Amplifiers

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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Primit Parikh – Yifeng Wu – M. Moore – P. Chavarkar – U. Mishra – R. Neidhard – L. Kehias – T. Jenkins – AlGaN-GaN HEMTs have not only been identified as the technology of choice for next generation high-power – high frequency applications but recently have also garnered interest for low noise receiver applications.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Thermal Considerations for High-Power GaN RF Amplifiers

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