Skip to Main Content
Contact
中文
Home
CMPA2935150

CMPA2935150

150W; 2.9 - 3.5 GHz; GaN MMIC

The CMPA2935150 is a high power two-stage MMIC housed in a QFN package allowing for compact module designs and easy assembly. The device is capable of 150W of pulsed output power.

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Form
Package Type
CMPA2935150S-AMP
Yes
GaN on SiC
2.9 GHz
3.5 GHz
150 W
Packaged MMIC
CMPA2935150S
Yes
GaN on SiC
2.9 GHz
3.5 GHz
150 W
Packaged MMIC
Features
  • High Power Added Efficiency
  • 190 W Typical PSAT
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Civil and Military Pulsed Radar Amplifiers
Apply Filters
Document Type
Document Name
Design Files
Product Catalog
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
Continue Reading 
 Technical Articles
Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2022 Wolfspeed, Inc.