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GTVA31180

GTVA31180

High Power RF GaN on SiC HEMT 180 W; 50 V; 2700 – 3100 MHz
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The GTVA31180 is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequency band. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
LTN/GTVA311801FA-V1
Yes
GaN on SiC
2.7 GHz
3.1 GHz
180 W
15 dB
70%
50 V
Packaged Discrete Transistor
Earless
GTVA311801FA-V1
Yes
GaN on SiC
2.7 GHz
3.1 GHz
180 W
15 dB
70%
50 V
Packaged Discrete Transistor
Earless
Features
  • Broadband internal input matching
  • Typical pulsed CW performance (class AB); 2700 – 3100 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power at P3dB = 180 W; Drain efficiency = 70%; Gain (P3dB) = 15 dB
  • Pb-free and RoHS compliant
Applications
  • Radar Amplifiers
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RF
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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