Contact
中文
Home
GTVA35500

GTVA35500

High Power RF GaN on SiC HEMTs 500 W; 50 V; 2900 – 3500 MHz
Request Model Access

The GTVA355001EC is a 500-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2900 to 3500 MHz frequency band. Featuring input and output matching; high efficiency; and a thermally-enhanced package.

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA355001EC
Yes
GaN on SiC
2.9 GHz
3.5 GHz
500 W
65%
50 V
Packaged Discrete Transistor
Bolt Down
LTN/GTVA355001EC-V1
Yes
GaN on SiC
2.9 GHz
3.5 GHz
500 W
>11.5 dB
65%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Broadband internal input and output matching
  • Typical pulsed CW performance (class AB); 3500 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power at P3dB = 500 W; Drain efficiency = 65%; Gain = 13 dB
  • Pb-free and RoHS compliant
Applications
  • Radar Amplifiers
Apply Filters
Document Type
Document Name
Data Sheets
Product Catalog
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

RF
|
Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading 
 Technical Articles
Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2022 Wolfspeed, Inc.