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GTVA35500

GTVA35500

h-36248-2_4
High Power RF GaN on SiC HEMTs 500 W; 50 V; 2900 – 3500 MHz
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The GTVA355001EC is a 500-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2900 to 3500 MHz frequency band. Featuring input and output matching; high efficiency; and a thermally-enhanced package.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA355001EC
Yes
GaN on SiC
2.9 GHz
3.5 GHz
500 W
65%
50 V
Packaged Discrete Transistor
Bolt Down
LTN/GTVA355001EC-V1
Yes
GaN on SiC
2.9 GHz
3.5 GHz
500 W
>11.5 dB
65%
50 V
Packaged Discrete Transistor
Bolt Down
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA355001EC
Yes
GaN on SiC
2.9 GHz
3.5 GHz
500 W
65%
50 V
Packaged Discrete Transistor
Bolt Down
LTN/GTVA355001EC-V1
Yes
GaN on SiC
2.9 GHz
3.5 GHz
500 W
>11.5 dB
65%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Broadband internal input and output matching
  • Typical pulsed CW performance (class AB); 3500 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power at P3dB = 500 W; Drain efficiency = 65%; Gain = 13 dB
  • Pb-free and RoHS compliant
Applications
  • Radar Amplifiers
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