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25-W; 13.75 to 14.5-GHz; 40-V; Ku-Band GaN MMIC Power Amplifier

Wolfspeed’s CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity. This Ku Band MMIC is available in a 10-lead; 25-mm x 9.9-mm; metal/ceramic flanged package for optimal electrical and thermal performance.

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Frequency Min
Frequency Max
Peak Output Power
Operating Voltage
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GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
40 V
Packaged MMIC
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
40 V
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  • 24 dB Small Signal Gain
  • 40 W Typical Pulsed PSAT
  • Operation up to 40 V
  • 20 W linear power under OQPSK
  • Class A/B high gain; high efficiency 50 ohm MMIC Ku Band high power amplifier
  • Satellite Communications Uplink
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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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