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CMPA1D1E030

Wolfspeed CMPA1D1E030D blurred
30-W; 13.75 to 14.5-GHz; 40-V; GaN MMIC Power Amplifier

Wolfspeed’s CMPA1D1E030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity.

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CMPA1D1E030

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CMPA1D1E030

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA1D1E030D
Yes
GaN on SiC
13.75 GHz
14.5 GHz
30 W
26 dB
25%
40 V
MMIC Bare Die
Die
Features
  • 27 dB Small Signal Gain
  • 30 W Typical PSAT
  • Operation up to 40 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Satellite Communications Uplink

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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Wolfspeed
Randall D. Lewis – Northrop Grumman Corp.
Benjamin M. Decker – Northrop Grumman Corp.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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