Features
- 27 dB Small Signal Gain
- 30 W Typical PSAT
- Operation up to 40 V
- High Breakdown Voltage
- High Temperature Operation
CMPA1D1E030
30-W; 13.75 to 14.5-GHz; 40-V; GaN MMIC Power Amplifier
Wolfspeed’s CMPA1D1E030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity.
Products
CMPA1D1E030
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CMPA1D1E030
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA1D1E030D | Yes | GaN on SiC | 13.75 GHz | 14.5 GHz | 30 W | 26 dB | 25% | 40 V | MMIC Bare Die | Die |
Applications
- Satellite Communications Uplink
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Documents
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Document Type | Document Name |
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| Application Notes | |
| Application Notes | |
| Application Notes | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Donald A. Gajewski – Wolfspeed
Randall D. Lewis – Northrop Grumman Corp. Benjamin M. Decker – Northrop Grumman Corp. |
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
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Knowledge Center
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