Skip to Main Content
浏览产品 (中文)


30-W; 13.75 to 14.5-GHz; 40-V; GaN MMIC Power Amplifier

Wolfspeed’s CMPA1D1E030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity.

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Recommended For New Design?
Frequency Min
Frequency Max
Peak Output Power
Operating Voltage
Package Type
GaN on SiC
13.75 GHz
14.5 GHz
30 W
26 dB
40 V
MMIC Bare Die
  • 27 dB Small Signal Gain
  • 30 W Typical PSAT
  • Operation up to 40 V
  • High Breakdown Voltage
  • High Temperature Operation
  • Satellite Communications Uplink
Apply Filters
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Wolfspeed
Randall D. Lewis – Northrop Grumman Corp.
Benjamin M. Decker – Northrop Grumman Corp.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
Continue Reading 
 Technical Articles


Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2022 Wolfspeed, Inc.