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CMPA1D1E080

CMPA1D1E080

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CMPA1D1E080F – 40V; 80 W; 13.75-14.5 GHz; Ku-Band GaN MMIC Power Amplifier
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Cree’s CMPA1D1E080F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate; using a 0.25 μm gate length fabrication process. The Ku Band 80W MMIC is targeted for commercial Ku Band satellite communications applications. It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 14 lead; 0.685” x 0.945” (17.4mm x 24mm) metal/ceramic flanged package.

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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA1D1E080F
Yes
GaN on SiC
13.75 GHz
14.5 GHz
80 W
28 dB
20%
40 V
Packaged MMIC
Flange
CMPA1D1E080F-AMP
Yes
GaN on SiC
13.75 GHz
14.5 GHz
80 W
28 dB
NA
40 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA1D1E080F
Yes
GaN on SiC
13.75 GHz
14.5 GHz
80 W
28 dB
20%
40 V
Packaged MMIC
Flange
CMPA1D1E080F-AMP
Yes
GaN on SiC
13.75 GHz
14.5 GHz
80 W
28 dB
NA
40 V
Evaluation Board
Flange
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Document Type
Document Name
Version
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Cree – Inc.
Randall D. Lewis – Northrop Grumman Corp.
Benjamin M. Decker – Northrop Grumman Corp.
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Product Catalog
Version: 1.0
Sales Terms
Version: M
Document Type
Document Name
Version
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Cree – Inc.
Randall D. Lewis – Northrop Grumman Corp.
Benjamin M. Decker – Northrop Grumman Corp.
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Product Catalog
Version: 1.0
Sales Terms
Version: M
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