Features
- 30 dB Small Signal Gain
- Up to 50 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
CMPA5585030
30 W; 5.5 – 8.5 GHz; GaN MMIC Power Amplifier
Wolfspeed’s CMP5585030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage; reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC is available as a die and in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.
Products
CMPA5585030
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CMPA5585030
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA5585030D | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 30 dB | 44% | 28 V | MMIC Bare Die | Die | ||||
CMPA5585030F-AMP | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28 V | Evaluation Board | Flange | ||||
CMPA5585030F | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28 V | Packaged MMIC | Flange |
Applications
- Point to Point Radio
- Communications
- Test Instrumentation
- EMC Amplifier Drivers
Documents, Tools & Support
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Documents
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| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Knowledge Center
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