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CMPA5585030

CMPA5585030

cmpa5585030f_1
30 W; 5.5 – 8.5 GHz; GaN MMIC Power Amplifier

Wolfspeed’s CMP5585030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage; reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC is available as a die and in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.

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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA5585030D
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
30 dB
44%
28 V
MMIC Bare Die
Die
CMPA5585030F
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Packaged MMIC
Flange
CMPA5585030F-AMP
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
NA
28 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA5585030D
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
30 dB
44%
28 V
MMIC Bare Die
Die
CMPA5585030F
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Packaged MMIC
Flange
CMPA5585030F-AMP
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
NA
28 V
Evaluation Board
Flange
Features
  • 30 dB Small Signal Gain
  • Up to 50 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Point to Point Radio
  • Communications
  • Test Instrumentation
  • EMC Amplifier Drivers
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Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Ecology
CMPA1D1E025F – CMPA5585025F – CMPA5585030F – CMPA601C025F – CMPA801B025F – CMPA901A035
Product Ecology
CMPA1D1E025F – CMPA5585025F – CMPA5585030F – CMPA601C025F – CMPA801B025F
Product Ecology
CMPA0060002D – CMPA0060025D – CMPA0527005D – CMPA1C1D060D – CMPA1D1E030D – CMPA1D1E050D – CMPA2060025D – CMPA2560025D – CMPA2735015D – CMPA2735075D – CMPA5080025D – CMPA5259030D – CMPA5259050D – CMPA5585025D – CMPA5585030D – CMPA601C025D – CMPA801B025D – CMPA901A040D
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Ecology
CMPA1D1E025F – CMPA5585025F – CMPA5585030F – CMPA601C025F – CMPA801B025F – CMPA901A035
Product Ecology
CMPA1D1E025F – CMPA5585025F – CMPA5585030F – CMPA601C025F – CMPA801B025F
Product Ecology
CMPA0060002D – CMPA0060025D – CMPA0527005D – CMPA1C1D060D – CMPA1D1E030D – CMPA1D1E050D – CMPA2060025D – CMPA2560025D – CMPA2735015D – CMPA2735075D – CMPA5080025D – CMPA5259030D – CMPA5259050D – CMPA5585025D – CMPA5585030D – CMPA601C025D – CMPA801B025D – CMPA901A040D
Product Catalog
Sales Terms
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Knowledge Center

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GaN on SiC

Thermal Considerations for X-Band MMICs Under CW Operation

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GaN on SiC

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