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Wolfspeed 提供用于通信系统设计的碳化硅基氮化镓和 LDMOS 功率晶体管丰富产品组合,以支持从 450 MHz 至 5 GHz和功率水平达到1,000 W的所有全球标准和频带。关键特性包括高功率 Doherty 设计,在 DPD 系统中易于使用,开放式共振腔封装和塑料封装选项,以及参考设计。随着 5G 的不断扩展和成熟,我们将继续扩大和探索宽禁带半导体碳化硅基氮化镓的固有优势,为全球各地的设计者和开发者提供更高的性能。Wolfspeed 拥有 30 多年宽禁带半导体材料和产品创新的丰富经验,实现性能更高、消耗更少的行业领先器件,是满足您射频需求的完整设计合作伙伴。

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新设计推荐?
技术
频率(最小值)
频率(最大值)
P3dB 输出功率
增益
效率
工作电压
封装类型
PTVA120252MT-V1
Yes
LDMOS
0.5 GHz
1.4 GHz
25 W
19 dB
64%
48 V
Surface Mount
No
LDMOS
1.8 GHz
2.2 GHz
27 W
17 dB
49%
28 V
Earless
No
LDMOS
1.8 GHz
2.2 GHz
28 W
21 dB
29%
28 V
Earless
No
LDMOS
2.3 GHz
2.7 GHz
45.7 W
14 dB
44%
28 V
Earless
Yes
LDMOS
1.8 GHz
2.2 GHz
63 W
27 dB
37%
28 V
Surface Mount
No
LDMOS
1.805 GHz
1.99 GHz
140 W
20.5 dB
31%
28 V
Earless
Yes
GaN on SiC
2.3 GHz
2.7 GHz
170 W
17 dB
43%
50 V
Earless
Yes
GaN on SiC
2.62 GHz
2.69 GHz
170 W
16.8 dB
43%
48 V
Earless
Discontinued
LDMOS
0.746 GHz
0.768 GHz
175 W
17 dB
52%
50 V
Earless
No
LDMOS
2.11 GHz
2.17 GHz
208 W
18 dB
35%
28 V
Earless
No
LDMOS
1.805 GHz
1.88 GHz
222 W
20 dB
36%
28 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
250 W
22.5 dB
36%
48 V
Plastic
Discontinued
LDMOS
0.746 GHz
0.96 GHz
250 W
18.5 dB
48%
48 V
Earless
Yes
GaN on SiC
2.49 GHz
2.69 GHz
250 W
14 dB
54%
48 V
Earless
Yes
GaN on SiC
2.62 GHz
2.69 GHz
270 W
17 dB
42%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
275 W
18 dB
56%
48 V
Surface Mount
Yes
LDMOS
0.5 GHz
1 GHz
287 W
22.5 dB
40%
48 V
Plastic
Yes
LDMOS
2.11 GHz
2.2 GHz
290 W
16 dB
52%
28 V
Plastic
Yes
GaN on SiC
1.8 GHz
2.2 GHz
300 W
19 dB
38%
48 V
Earless
Yes
GaN on SiC
2.62 GHz
2.69 GHz
300 W
18 dB
39%
48 V
Earless
Yes
LDMOS
1.8 GHz
2.2 GHz
315 W
16 dB
50.5%
28 V
Plastic
Yes
LDMOS
0.5 GHz
1 GHz
370 W
23.5 dB
39%
48 V
Plastic
Yes
LDMOS
0.5 GHz
1 GHz
370 W
17 dB
52%
48 V
Plastic
Yes
LDMOS
0.5 GHz
1 GHz
380 W
18.5 dB
52%
48 V
Plastic
Yes
LDMOS
2.62 GHz
2.69 GHz
400 W
13.5 dB
47%
28 V
Plastic
Yes
GaN on SiC
3.6 GHz
3.8 GHz
400 W
13 dB
42%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
420 W
17.5 dB
53%
48 V
Plastic
No
LDMOS
1.805 GHz
1.88 GHz
420 W
16 dB
51.5%
28 V
Earless
No
LDMOS
1.8 GHz
2.3 GHz
436 W
16 dB
48.7%
28 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
550 W
18 dB
55%
48 V
Plastic
Yes
LDMOS
0.5 GHz
1 GHz
600 W
19 dB
49%
48 V
Plastic
Yes
GaN on SiC
2.5 GHz
2.7 GHz
400 W
14 dB
50%
48 V
Earless
Yes
LDMOS
0.79 GHz
0.82 GHz
250 W
15.5 dB
45%
48 V
Plastic
Yes
GaN on SiC
2.495 GHz
2.69 GHz
370 W
13.8 dB
54%
48 V
Earless
Yes
GaN on SiC
3.3 GHz
3.9 GHz
280 W
13.5 dB
46%
48 V
Earless
Yes
GaN on SiC
3.3 GHz
3.9 GHz
400 W
13 dB
40%
48 V
Earless
Yes
GaN on SiC
1.8 GHz
2.2 GHz
45 W
19 dB
27%
50 V
Earless
Yes
GaN on SiC
2.3 GHz
2.7 GHz
340 W
17 dB
40%
48 V
Earless
Yes
GaN on SiC
3.7 GHz
4.1 GHz
235 W
11.5 dB
45%
48 V
Earless
Yes
LDMOS
0.73 GHz
0.96 GHz
800 W
18 dB
48%
48 V
Plastic
No
LDMOS
0.859 GHz
0.96 GHz
500 W
17 dB
52%
48 V
Plastic
Yes
LDMOS
0.73 GHz
0.96 GHz
615 W
19 dB
50%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
30 W
32 dB
19%
48 V
Surface Mount
Yes
LDMOS
1.8 GHz
2.2 GHz
37 W
30 dB
18.5%
28 V
Surface Mount
Yes
GaN on SiC
2.496 GHz
2.69 GHz
50 W
16.5 dB
57%
48 V
Surface Mount
Yes
GaN on SiC
3.3 GHz
3.8 GHz
60 W
13.5 dB
52%
48 V
Surface Mount
Yes
GaN on SiC
3.7 GHz
3.98 GHz
60 W
13 dB
52%
48 V
Surface Mount
Yes
GaN on SiC
3.4 GHz
3.8 GHz
50 W
15 dB
55%
48 V
Surface Mount
Yes
GaN on SiC
2.11 GHz
2.17 GHz
490 W
14.4 dB
59%
48 V
Earless
Yes
GaN on SiC
1.805 GHz
1.88 GHz
460 W
15.5 dB
60%
48 V
Earless
Yes
LDMOS
0.92 GHz
0.96 GHz
460 W
17.5 dB
52%
48 V
Surface Mount
Yes
GaN on SiC
2.515 GHz
2.675 GHz
45 W
16 dB
57%
48 V
Surface Mount
Yes
GaN on SiC
3.3 GHz
3.9 GHz
200 W
13.5 dB
42%
48 V
Earless
Yes
GaN on SiC
3.6 GHz
3.7 GHz
450 W
12 dB
38%
48 V
Earless
No
LDMOS
0.9 GHz
2.7 GHz
12 W
20 dB
60%
28 V
Surface Mount
No
LDMOS
1.805 GHz
1.99 GHz
220 W
20.5 dB
32%
28 V
Earless
Yes
GaN on SiC
3.7 GHz
3.98 GHz
450 W
12 dB
42%
48 V
Earless
Yes
GaN on SiC
2.11 GHz
2.2 GHz
450 W
15 dB
60%
48 V
Earless
Yes
LDMOS
2.515 GHz
2.675 GHz
240 W
13.5 dB
47%
28 V
Plastic
Yes
GaN on SiC
2.11 GHz
2.2 GHz
400 W
15.5 dB
55%
48 V
Earless
GTRB186002FC-V1
New
Yes
GaN on SiC
1.805 GHz
1.88 GHz
500 W
15.7 dB
54%
48 V
Earless
Yes
GaN on SiC
1.93 GHz
2.02 GHz
500 W
14.8 dB
53%
48 V
Earless
Yes
GaN on SiC
2.515 GHz
2.675 GHz
500 W
15 dB
52%
48 V
Earless
Yes
GaN on SiC
1.93 GHz
2.02 GHz
350 W
16.3 dB
58%
48 V
Earless
Yes
GaN on SiC
3.3 GHz
3.8 GHz
440 W
12.3 dB
41 %
48 V
Earless
Yes
GaN on SiC
DC
5 GHz
10 W
18 dB
19%
48 V
Surface Mount
Yes
GaN on SiC
2.3 GHz
2.4 GHz
500 W
15.7 dB
54%
48 V
Earless
Yes
GaN on SiC
2.62 GHz
2.69 GHz
630 W
14 dB
49%
48 V
Earless
Yes
GaN on SiC
0.758 GHz
0.96 GHz
450 W
18 dB
59%
48 V
Earless
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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