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GTRA262802FC-V2

High Power RF GaN on SiC HEMT 250 W; 48 V; 2490 – 2690 MHz

The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA262802FC-V2
Yes
GaN on SiC
2.49 GHz
2.69 GHz
250 W
14 dB
54%
48 V
Earless
Features
  • Input matched
  • Typical pulsed CW performance: 2605 MHz; 48 V; 16 μs pulse width; 10% duty cycle
  • Output power at P3dB 250 W
  • Efficiency 62%
  • Gain 14.4 dB
  • Capable of handling 10:1 VSWR @48 V; 38 W (CW) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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