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GTRA360502M-V1

High Power RF GaN on SiC HEMT 50 W; 48 V; 3400 – 3800 MHz

The GTRA360502M is a 50-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally enhanced; overmold package.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA360502M-V1
Yes
GaN on SiC
3.4 GHz
3.8 GHz
50 W
15 dB
55%
48 V
Surface Mount
Features
  • GaN on SiC HEMT technology
  • Asymmetric Doherty design
    • Main: P1dB = 20 W Typ
    • Peak: P1dB = 37 W Typ
  • Typical pulsed CW performance; 3500 MHz; 48 V
    • Output power at P3dB = 50 W
    • Gain = 15 dB
    • Efficiency = 55%
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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