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GTRA362002FC-V1

Product shot of Wolfspeed's RF earless flange H-37248C-4 package.
High Power RF GaN on SiC HEMT 200 W; 48 V; 3400 – 3600 MHz
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The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA362002FC-V1
Yes
GaN on SiC
3.3 GHz
3.9 GHz
200 W
13.5 dB
42%
48 V
Earless
Features
  • Input matched
  • Asymmetrical Doherty design: Main P3dB 85 W Typ; Peak P3dB 115 W Typ
  • Typical Pulsed CW performance; 3500 MHz; 48 V; combined outputs
  • Output power at P3dB 200 W
  • Efficiency 60%
  • Gain 12.5 dB
  • Capable of handling 10:1 VSWR @50 V; 30 W (CW) output power
  • Low thermal resistance
  • Pb-free and RoHS complian
Applications
  • Multi-standard Cellular Power Amplifiers
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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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